FDMA6023PZT Fairchild Semiconductor, FDMA6023PZT Datasheet - Page 2
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FDMA6023PZT
Manufacturer Part Number
FDMA6023PZT
Description
MOSFET P-CH DUAL 20V 6MICROFET
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDMA6023PZT.pdf
(7 pages)
Specifications of FDMA6023PZT
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
60 mOhm @ 3.6A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.6A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 4.5V
Input Capacitance (ciss) @ Vds
885pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-UMLP, 6-MicroFET™
Configuration
Dual
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.06 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
3.6 A
Power Dissipation
1400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Module Configuration
Dual
Continuous Drain Current Id
-3.6A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
60mohm
Rds(on) Test Voltage Vgs
-4.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMA6023PZTTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMA6023PZT
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2009 Fairchild Semiconductor Corporation
FDMA6023PZT Rev.B1
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
∆BV
I
I
V
r
g
C
C
C
t
t
t
t
Q
Q
Q
I
V
t
Q
DSS
GSS
∆V
d(on)
r
d(off)
f
S
rr
DS(on)
FS
GS(th)
SD
iss
oss
rss
∆T
∆T
g
gs
gd
rr
Symbol
DSS
GS(th)
DSS
J
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Maximum Continuous Drain-Source Diode Forward Current
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
T
J
= 25 °C unless otherwise noted
V
V
V
V
f = 1 MHz
I
I
V
V
V
I
V
V
V
V
V
T
V
V
I
D
D
D
F
DD
GS
GS
J
DS
DS
GS
GS
GS
GS
GS
GS
GS
DD
GS
= -3.6 A, di/dt = 100 A/µs
= -250 µA, V
= -250 µA, referenced to 25 °C
= -250 µA, referenced to 25 °C
= 125 °C
= 0 V to -4.5 V
= -10 V, V
= -10 V, I
= -4.5 V, R
= -16 V, V
= 0 V, I
= ±8 V, V
= V
= -4.5 V, I
= -2.5 V, I
= -1.8 V, I
= -1.5 V, I
= -4.5 V, I
= -5 V, I
DS
2
Test Conditions
, I
S
D
D
D
= -1.1 A
DS
GS
GS
D
D
D
D
D
= -3.6 A
GS
= -250 µA
= -3.6 A,
GEN
= -3.6 A
= -3.0 A
= -2.0 A
= -1.0 A
= -3.6 A,
= 0 V
= 0 V
= 0 V,
= 0 V
= 6 Ω
V
I
D
DD
= -3.6 A
(Note 2)
= -10 V,
Min
-0.4
-20
-0.7
Typ
-0.5
-2.7
665
100
115
-12
1.4
5.2
33
15
40
49
60
70
58
15
13
11
75
47
12
Max
±10
-1.5
170
885
155
150
120
-1.1
-1.2
110
60
80
72
23
20
75
17
53
27
-1
www.fairchildsemi.com
mV/°C
mV/°C
Units
mΩ
µA
µA
nC
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
V
V
S
A
V