FDS9958 Fairchild Semiconductor, FDS9958 Datasheet - Page 4
![MOSFET P-CH 60V DUAL SO-8](/photos/5/44/54472/fds9958_sml.jpg)
FDS9958
Manufacturer Part Number
FDS9958
Description
MOSFET P-CH 60V DUAL SO-8
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS9958.pdf
(6 pages)
Specifications of FDS9958
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
105 mOhm @ 2.9A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2.9A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 10V
Input Capacitance (ciss) @ Vds
1020pF @ 30V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.105 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.9 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS9958TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS9958
Manufacturer:
FSC
Quantity:
15 000
Company:
Part Number:
FDS9958
Manufacturer:
Fairchild Semiconductor
Quantity:
33 440
Part Number:
FDS9958
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
FDS9958-NL
Manufacturer:
FAIRCHILD
Quantity:
12 652
Part Number:
FDS9958-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2007 Fairchild Semiconductor Corporation
FDS9958 Rev.C
Typical Characteristics
0.01
0.1
10
20
10
1
4
3
2
1
Figure 7.
0.01
8
6
4
2
0
0.1
0
THIS AREA IS
LIMITED BY r
Figure 9.
I
D
Figure 11. Forward Bias Safe
= -2.9A
-V
Switching Capability
SINGLE PULSE
T
R
T
DS
V
Gate Charge Characteristics
J
A
θ
DD
t
0.1
, DRAIN to SOURCE VOLTAGE (V)
JA
AV
= MAX RATED
= 25
5
DS(on)
Operating Area
Unclamped Inductive
= -30V
, TIME IN AVALANCHE(ms)
= 135
1
Q
o
g
C
, GATE CHARGE(nC)
o
T
V
C/W
V
J
DD
DD
= 125
= -40V
= -20V
10
1
o
C
10
T
J
= 25°C unless otherwise noted
T
J
10
15
= 25
o
C
100
100ms
1s
10s
0.1ms
1ms
10ms
DC
200
100
20
4
2000
1000
Figure 10.
100
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
200
0.5
10
10
1
Figure 12.
0.1
25
Current vs Ambient Temperature
10
Figure 8.
-3
f = 1MHz
V
R
GS
θ
JA
= 0V
= 78
10
-V
V
Power Dissipation
Maximum Continuous Drain
to Source Voltage
50
GS
DS
-2
T
o
A
Single Pulse Maximum
, DRAIN TO SOURCE VOLTAGE (V)
V
C/W
Capacitance vs Drain
,
= -10V
GS
AMBIENT TEMPERATURE (
t, PULSE WIDTH (s)
= -4.5V
10
1
-1
75
10
0
100
10
C
C
C
SINGLE PULSE
R
T
1
10
oss
iss
rss
A
θ
JA
= 25
V
o
www.fairchildsemi.com
= 135
GS
C )
125
o
C
10
= -10V
o
2
C/W
10
150
60
3