FDS6912 Fairchild Semiconductor, FDS6912 Datasheet - Page 3
![MOSFET N-CH DUAL PWM OPT 8-SOIC](/photos/5/42/54236/261-8-soic_sml.jpg)
FDS6912
Manufacturer Part Number
FDS6912
Description
MOSFET N-CH DUAL PWM OPT 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Specifications of FDS6912
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
28 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 5V
Input Capacitance (ciss) @ Vds
740pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Module Configuration
Dual
Transistor Polarity
N Channel
Continuous Drain Current Id
6A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
28mohm
Rds(on) Test Voltage Vgs
10V
Rohs Compliant
Yes
Dc
0452
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS6912
Manufacturer:
FSC
Quantity:
5 550
Part Number:
FDS6912
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS6912-NL
Manufacturer:
FSC
Quantity:
68 500
Company:
Part Number:
FDS6912-NL
Manufacturer:
SIEMENS
Quantity:
5 000
Part Number:
FDS6912-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS6912A
Manufacturer:
FAIRCHIL
Quantity:
29 332
Company:
Part Number:
FDS6912A
Manufacturer:
FSC
Quantity:
50 000
Part Number:
FDS6912A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics
20
16
12
20
16
12
8
4
0
8
4
0
1.5
1.6
1.4
1.2
0.8
0.6
Figure 3. On-Resistance Variation with
0
1
Figure 1. On-Region Characteristics.
-50
Figure 5. Transfer Characteristics.
V
DS
V
V
= 5V
GS
GS
I
D
-25
6.0V
= 10.0V
= 10.0V
= 6A
2
V
0.5
GS
V
DS
T
, GATE TO SOURCE VOLTAGE (V)
0
J
Temperature.
, DRAIN-SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
4.5V
2.5
25
T
4.0V
A
= 125
1
50
o
C
3
75
25
-55
o
3.5V
C
1.5
3.0V
100
o
o
C)
C
3.5
125
150
4
2
Figure 6. Body Diode Forward Voltage Variation
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.0001
0.001
0.01
2.2
1.8
1.4
0.6
100
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
0.1
with Source Current and Temperature.
10
2
1
1
0
0
Drain Current and Gate Voltage.
T
V
A
GS
= 25
= 0V
V
GS
Gate-to-Source Voltage.
o
C
0.2
= 3.5V
V
4.0
SD
V
4
4
GS
, BODY DIODE FORWARD VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
T
T
A
A
= 125
4.5V
I
= 125
D
0.4
, DRAIN CURRENT (A)
o
o
C
8
C
5.0
6
0.6
25
o
12
C
6.0V
0.8
-55
8
o
FDS6912A Rev D(W)
C
10.0V
16
I
D
1
= 3A
1.2
20
10