FDS6912 Fairchild Semiconductor, FDS6912 Datasheet - Page 3

• Manufacturer Part Number: FDS6912
• Description: MOSFET N-CH DUAL PWM OPT 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6912

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 5V
• Input Capacitance (ciss) @ Vds: 740pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Module Configuration: Dual
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 28mohm
• Rds(on) Test Voltage Vgs: 10V
• Rohs Compliant: Yes
• Dc: 0452
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
20
16
12
20
16
12
8
4
0
8
4
0
1.5
1.6
1.4
1.2
0.8
0.6
Figure 3. On-Resistance Variation with
0
1
Figure 1. On-Region Characteristics.
-50
Figure 5. Transfer Characteristics.
V
DS
V
V
= 5V
GS
GS
I
D
-25
6.0V
= 10.0V
= 10.0V
= 6A
2
V
0.5
GS
V
DS
T
, GATE TO SOURCE VOLTAGE (V)
0
J
Temperature.
, DRAIN-SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
4.5V
2.5
25
T
4.0V
A
= 125
1
50
o
C
3
75
25
-55
o
3.5V
C
1.5
3.0V
100
o
o
C)
C
3.5
125
150
4
2
Figure 6. Body Diode Forward Voltage Variation
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.0001
0.001
0.01
2.2
1.8
1.4
0.6
100
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
0.1
with Source Current and Temperature.
10
2
1
1
0
0
Drain Current and Gate Voltage.
T
V
A
GS
= 25
= 0V
V
GS
Gate-to-Source Voltage.
o
C
0.2
= 3.5V
V
4.0
SD
V
4
4
GS
, BODY DIODE FORWARD VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
T
T
A
A
= 125
4.5V
I
= 125
D
0.4
, DRAIN CURRENT (A)
o
o
C
8
C
5.0
6
0.6
25
o
12
C
6.0V
0.8
-55
8
o
FDS6912A Rev D(W)
C
10.0V
16
I
D
1
= 3A
1.2
20
10