FDS6912 Fairchild Semiconductor, FDS6912 Datasheet - Page 3

• Manufacturer Part Number: FDS6912
• Description: MOSFET N-CH DUAL PWM OPT 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6912

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 5V
• Input Capacitance (ciss) @ Vds: 740pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Module Configuration: Dual
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 28mohm
• Rds(on) Test Voltage Vgs: 10V
• Rohs Compliant: Yes
• Dc: 0452
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
30
24
18
12
20
15
10
6
0
5
0
0
1
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
V
-50
GS
Figure 1. On-Region Characteristics.
V
Figure 5. Transfer Characteristics.
Figure 3. On-Resistance Variation
DS
= 10V
I = 6.3A
V
D
= 5V
GS
1
-25
=10V
V
6.0V
2
GS
withTemperature.
, GATE TO SOURCE VOLTAGE (V)
0
V
T , JUNCTION TEMPERATURE (°C)
1
J
DS
, D RAIN-SOUR CE VOL TAGE (V)
5.0V
25
2
3
50
T = -55°C
J
4.0V
3.5V
75
2
4.5V
4
100
125°C
25°C
3
3.0V
125
5
3
150
Figure 6. Body Diode Forward Voltage Variation
8
7
6
5
4
3
2
1
0.0001
2
0.001
0.01
1.8
1.6
1.4
1.2
0.8
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
100
with Source Current and Temperature.
0.1
10
2
1
1
0
0
Drain Current and Gate Voltage.
V
GS
V
Gate-to-Source Voltage.
= 0V
GS
V
4
= 4.0V
10
T
SD
A
= 125
, BODY DIODE FORWARD VOLTAGE (V)
0.4
4.5V
V
GS
o
,GATE-SOURCE VOLTAGE (V)
I
C
D
5.0V
, DRAIN CURRENT (A)
20
25
T = 125 C
o
A
C
6
6.0V
0.8
-55
25 C
7.0V
o
30
o
C
o
8
10V
1.2
I = 3.0A
D
FDS6912 Rev E (W)
40
10
1.6
50