FDS6912 Fairchild Semiconductor, FDS6912 Datasheet - Page 4

• Manufacturer Part Number: FDS6912
• Description: MOSFET N-CH DUAL PWM OPT 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6912

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 5V
• Input Capacitance (ciss) @ Vds: 740pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Module Configuration: Dual
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 28mohm
• Rds(on) Test Voltage Vgs: 10V
• Rohs Compliant: Yes
• Dc: 0452
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics (continued)
0.05
0.01
100
0.5
20
10
10
2
8
6
4
2
0
Figure 9. Maximum Safe Operating Area.
0.1
Figure 7. Gate Charge Characteristics.
0
0.005
0.002
0.001
0.05
0.02
0.01
R
SINGLE PULSE
0.5
0.2
0.1
I
0.0001
D
JA
1
V
T
0.2
= 6.3A
GS
A
= 135 °C/W
= 25°C
= 10V
V
0.5
4
DS
D = 0.5
, DRAIN-SOURCE VOLTAGE (V)
0.2
Q
0.1
g
1
, GATE CHARGE (nC)
0.05
0.001
0.02
0.01
Single Pulse
2
8
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
V
5
DS
= 5V
0.01
12
10
15V
20
10V
16
t , TIME (sec)
0.1
1
30
25
20
15
10
2000
1000
5
0
500
200
0.01
80
Figure 8. Capacitance Characteristics.
0.1
Figure 10. Single Pulse Maximum
f = 1 MHz
V
1
0.1
GS
0.3
= 0V
V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
1
P(pk)
T - T
10
R
Duty Cycle, D = t /t
J
R
JA
t
1
A
JA
(t) = r(t) * R
1
t
= P * R
2
= 135°C/W
10
3
R
JA
SINGLE PULSE
1
JA
(t)
JA
2
T = 25°
100
= 135°C/W
10
A
100
FDS6912 Rev E (W)
C iss
C oss
C rss
300
1000
30