FDS6912 Fairchild Semiconductor, FDS6912 Datasheet - Page 4
![MOSFET N-CH DUAL PWM OPT 8-SOIC](/photos/5/42/54236/261-8-soic_sml.jpg)
FDS6912
Manufacturer Part Number
FDS6912
Description
MOSFET N-CH DUAL PWM OPT 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Specifications of FDS6912
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
28 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 5V
Input Capacitance (ciss) @ Vds
740pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Module Configuration
Dual
Transistor Polarity
N Channel
Continuous Drain Current Id
6A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
28mohm
Rds(on) Test Voltage Vgs
10V
Rohs Compliant
Yes
Dc
0452
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS6912
Manufacturer:
FSC
Quantity:
5 550
Part Number:
FDS6912
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS6912-NL
Manufacturer:
FSC
Quantity:
68 500
Company:
Part Number:
FDS6912-NL
Manufacturer:
SIEMENS
Quantity:
5 000
Part Number:
FDS6912-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS6912A
Manufacturer:
FAIRCHIL
Quantity:
29 332
Company:
Part Number:
FDS6912A
Manufacturer:
FSC
Quantity:
50 000
Part Number:
FDS6912A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics (continued)
0.05
0.01
100
0.5
20
10
10
2
8
6
4
2
0
Figure 9. Maximum Safe Operating Area.
0.1
Figure 7. Gate Charge Characteristics.
0
0.005
0.002
0.001
0.05
0.02
0.01
R
SINGLE PULSE
0.5
0.2
0.1
I
0.0001
D
JA
1
V
T
0.2
= 6.3A
GS
A
= 135 °C/W
= 25°C
= 10V
V
0.5
4
DS
D = 0.5
, DRAIN-SOURCE VOLTAGE (V)
0.2
Q
0.1
g
1
, GATE CHARGE (nC)
0.05
0.001
0.02
0.01
Single Pulse
2
8
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
V
5
DS
= 5V
0.01
12
10
15V
20
10V
16
t , TIME (sec)
0.1
1
30
25
20
15
10
2000
1000
5
0
500
200
0.01
80
Figure 8. Capacitance Characteristics.
0.1
Figure 10. Single Pulse Maximum
f = 1 MHz
V
1
0.1
GS
0.3
= 0V
V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
1
P(pk)
T - T
10
R
Duty Cycle, D = t /t
J
R
JA
t
1
A
JA
(t) = r(t) * R
1
t
= P * R
2
= 135°C/W
10
3
R
JA
SINGLE PULSE
1
JA
(t)
JA
2
T = 25°
100
= 135°C/W
10
A
100
FDS6912 Rev E (W)
C iss
C oss
C rss
300
1000
30