FDS6994S Fairchild Semiconductor, FDS6994S Datasheet - Page 3

• Manufacturer Part Number: FDS6994S
• Description: MOSFET N-CH DUAL 30V 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®, SyncFET™r

Specifications of FDS6994S

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 6.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.9A, 8.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 5V
• Input Capacitance (ciss) @ Vds: 800pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.021 Ohm @ 10 V @ Q1
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 6.9 A @ Q1 or 8.2 A @ Q2
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
Electrical Characteristics
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
t
Q
t
Q
V
Symbol
the drain pins. R
d(on)
r
d(off)
f
S
RR
RR
SD
g
gs
gd
RR
RR
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Drain-Source Diode Forward
Voltage
JC
is guaranteed by design while R
Parameter
a)
78°C/W when
mounted on a
0.5in
oz copper
2
pad of 2
(Note 2)
CA
V
V
Q2:
V
Q1:
V
I
d
I
d
V
V
(continued)
is determined by the user's board design.
F
F
iF
iF
DD
GS
DS
DS
GS
GS
= 8.2 A,
= 6.9 A,
/d
/d
= 15 V, I
= 15 V, I
= 15 V, I
= 10V, R
= 0 V, I
= 0 V, I
t
t
= 300 A/µs
= 100 A/µs
Test Conditions
S
S
D
D
D
= 2.3 A
= 1.3 A
GEN
= 1 A,
= 7.9 A, V
= 6.5 A, V
= 6
b)
T
A
= 25°C unless otherwise noted
125°C/W when
mounted on a
0.02 in
2 oz copper
GS
GS
(Note 3)
(Note 3)
= 5 V
= 5 V
2
(Note 2)
(Note 2)
pad of
Type Min
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q2
Q2
Q1
Typ Max Units
c)
0.53
0.4
11
11
50
27
17
25
25
19
23
10
8
7
4
8
6
3
7
3
135°C/W when
mounted on a
minimum pad.
2.3
1.3
1.2
20
20
16
14
80
43
31
35
12
8
7
FDS6994S Rev C2(W)
nC
nC
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
V