SI7212DN-T1-E3 Vishay, SI7212DN-T1-E3 Datasheet - Page 3
![MOSFET DUAL N-CH 30V 1212-8](/photos/5/42/54273/pkg_5882_sml.jpg)
SI7212DN-T1-E3
Manufacturer Part Number
SI7212DN-T1-E3
Description
MOSFET DUAL N-CH 30V 1212-8
Manufacturer
Vishay
Series
TrenchFET®r
Specifications of SI7212DN-T1-E3
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
36 mOhm @ 6.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.9A
Vgs(th) (max) @ Id
1.6V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 4.5V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8 Dual
Transistor Polarity
N Channel
Continuous Drain Current Id
6.8A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
39mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
1.6V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI7212DN-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7212DN-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73128
S09-1815-Rev. F, 14-Sep-09
0.05
0.04
0.03
0.02
0.01
0.00
10
20
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
V
Source-Drain Diode Forward Voltage
= 6.8 A
0.2
GS
On-Resistance vs. Drain Current
= 15 V
= 4.5 V
4
3
V
SD
Q
0.4
g
- Source-to-Drain Voltage (V)
- Total Gate Charge (nC)
I
D
Gate Charge
- Drain Current (A)
6
8
T
0.6
J
= 150 °C
0.8
12
9
T
1.0
V
J
GS
= 25 °C
16
12
= 10 V
1.2
1.4
20
15
1200
1000
0.10
0.08
0.06
0.04
0.02
0.00
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
C
I
D
rss
On-Resistance vs. Junction Temperature
= 2 A
On-Resistance vs. Gate-to-Source Voltage
V
I
D
- 25
C
GS
= 6.8 A
oss
5
= 10 V
2
V
V
DS
0
T
GS
J
I
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
D
10
- Gate-to-Source Voltage (V)
= 6.8 A
25
Capacitance
C
4
iss
50
15
Vishay Siliconix
6
75
Si7212DN
20
100
www.vishay.com
8
25
125
150
10
30
3