SP8M10FU6TB Rohm Semiconductor, SP8M10FU6TB Datasheet - Page 3

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SP8M10FU6TB

Manufacturer Part Number
SP8M10FU6TB
Description
MOSFET N/P-CH 30V 7A/4.5A 8SOIC
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of SP8M10FU6TB

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
24 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7A, 4.5A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
11.8nC @ 5V
Input Capacitance (ciss) @ Vds
600pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.025 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7 A, - 4.5 A
Power Dissipation
2 W
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Transistors
P-ch
Pulsed
Pulsed
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
Gate-drain
Forward voltage
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-Drain Characteristics) (Ta=25°C)
Parameter
Parameter
charge
charge
V
Symbol
Symbol
R
V
(BR) DSS
t
t
C
I
I
C
V
GS (th)
DS (on)
C
d (on)
d (off)
Q
Q
Y
GSS
DSS
Q
t
t
oss
SD
iss
rss
r
gd
fs
f
gs
g
Min.
Min.
3.5
1.0
30
Typ.
Typ.
850
190
120
8.5
2.5
3.0
40
57
65
10
25
60
25
Max.
Max.
56
80
90
2.5
1.2
10
1
Unit
Unit
m
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
V
S
V
A
A
V
I
V
V
I
I
I
I
V
V
f 1MHz
I
V
R
R
V
V
I
I
D
D
D
D
D
D
D
S
GS
DS
DS
DS
GS
GS
L
GS
DD
GS
6.0
1.6A, V
1mA, V
4.5A, V
4.5A, V
4.5A, V
4.5A, V
2.5A, V
4.5A
0V
10
30V, V
10V, I
10V
20V, V
10V
5V
15V
Conditions
Conditions
GS
GS
GS
GS
GS
DS
DD
D
GS
DS
0V
0V
1mA
0V
0V
10V
4.5V
4.0V
10V
15V
SP8M10
3/5

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