SH8M4TB1 Rohm Semiconductor, SH8M4TB1 Datasheet - Page 5

• Manufacturer Part Number: SH8M4TB1
• Description: MOSFET N/P-CH 30V SOP8
• Manufacturer: Rohm Semiconductor

Specifications of SH8M4TB1

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9A, 7A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 15nC @ 5V
• Input Capacitance (ciss) @ Vds: 1190pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOP
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 17 mOhms
• Forward Transconductance Gfs (max / Min): 7 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 9 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SH8M4TB1TR

P-ch
Electrical characteristic curves
○
SH8M4
c
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2009 ROHM Co., Ltd. All rights reserved.
10000
0.001
1000
0.01
100
0.1
100
10
0.01
10
1
0.0
Fig.4 Typical Transfer Characteristics
1
0.1
Fig.1 Typical Capacitance
DRAIN-SOURCE VOLTAGE : −V
GATE-SOURCE VOLTAGE : −V
0.5
Fig.7 Static Drain-Source
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
vs. Drain-Source Voltage
DRAIN CURRENT : −I
0.1
1.0
On-State Resistance
vs. Drain Current (Ι)
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
1.5
2.0
1
1
2.5
10
3.0
V
Pulsed
Ta=25°C
f=1MHz
V
V
Pulsed
D
DS
GS
GS
(A)
= −10V
=0V
3.5
GS
= −10V
DS
C
C
C
iss
oss
rss
(V)
(V)
100
4.0
10
10000
1000
1000
100
100
10
200
150
100
10
1
0.01
50
0.1
0
Fig.2 Switching Characteristics
0
Fig.5 Static Drain-Source
I
GATE-SOURCE VOLTAGE : −V
D
Fig.8 Static Drain-Source
=−3.5A
t
2
d (off)
DRAIN CURRENT : −I
DRAIN CURRENT : −I
On-State Resistance vs.
Gate-Source Voltage
t
On-State Resistance
vs. Drain Current (ΙΙ)
f
4
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
5/5
I
D
=−7.0A
6
1
8
10
t
1
d (on)
V
Pulsed
Ta=25°C
V
V
R
Pulsed
D
D
12
GS
DD
GS
G
(A)
Ta=25°C
Pulsed
(A)
=10Ω
= −4.5V
= −15V
= −10V
t
r
GS
14
(V)
10
10
16
0.01
1000
100
0.1
10
10
1
8
7
6
5
4
3
2
1
0
0.0
0.1
Fig.3 Dynamic Input Characteristics
0
SOURCE-DRAIN VOLTAGE : −V
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Fig.6 Source Current vs.
Fig.9 Static Drain-Source
TOTAL GATE CHARGE : Qg (nC)
5
DRAIN CURRENT : −I
On-State Resistance
vs. Drain Current (ΙΙΙ)
Source-Drain Voltage
2009.12 - Rev.A
0.5
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Data Sheet
15
1
1.0
20
Ta=25°C
V
I
R
Pulsed
D
D
V
Pulsed
DD
= −7A
G
(A)
GS
V
Pulsed
=10Ω
25
= −15V
GS
= −4V
SD
=0V
(V)
1.5
30
10