IRF7507TRPBF International Rectifier, IRF7507TRPBF Datasheet - Page 5

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IRF7507TRPBF

Manufacturer Part Number
IRF7507TRPBF
Description
MOSFET N/P-CH 20V 1.7A MICRO8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7507TRPBF

Package / Case
Micro8™
Mounting Type
Surface Mount
Power - Max
1.25W
Fet Type
N and P-Channel
Gate Charge (qg) @ Vgs
8nC @ 4.5V
Vgs(th) (max) @ Id
700mV @ 250µA
Current - Continuous Drain (id) @ 25° C
2.4A, 1.7A
Drain To Source Voltage (vdss)
20V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
140 mOhm @ 1.7A, 4.5V
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
140 mOhms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
2.4 A
Power Dissipation
1.25 W
Gate Charge Qg
5.3 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7507TRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
Fig 11. Typical Output Characteristics
Fig 13. Typical Transfer Characteristics
0.01
0.01
1 0 0
0.1
2.0
1.5
1.0
0.5
0.0
0.1
1 0
1 0
1
1
Fig 15. Normalized On-Resistance
0.1
-60
1.5
TOP
BOTTOM - 1.5V
I
D
-40
= -1.2A
2.0
-V
T , Junction Tem perature (°C )
-V
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
-20
J
VGS
D S
G S
T = 2 5 °C
, D rain-to-S ource Voltage (V )
2.5
, G a te -to -S o u rce V o lta g e (V )
0
J
Vs. Temperature
2 0
-1.5V
3.0
4 0
T = 1 5 0 °C
1
J
6 0
3.5
V
2 0 µ s P U L S E W ID T H
20µs P U LS E W ID TH
T = 25°C
D S
J
8 0
= -1 0 V
4.0
1 0 0 1 2 0 1 4 0 1 6 0
V
G S
= -4.5V
4.5
5.0
1 0
A
A
A
P - Channel
Fig 16. Typical On-Resistance Vs. Drain
Fig 12. Typical Output Characteristics
Fig 14. Typical Source-Drain Diode
0.01
1 0 0
0.01
1.0
0.8
0.6
0.4
0.2
0.0
0.1
1 0
0.1
10
1
1
0.1
0.0
0.4
TOP
BOTTOM - 1.5V
T = 1 50 °C
J
-V
-V
Forward Voltage
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
VGS
D S
S D
0.5
-I
0.6
Current
, D rain-to-Source V oltage (V)
D
, S ourc e-to-D rain V oltage (V )
VGS = -2.5V
, Drain Current (A)
1.0
T = 2 5°C
0.8
1
J
VGS = -5.0V
IRF7507
20µ s P U LS E W ID TH
T = 150°C
J
-1.5V
1.5
1.0
V
G S
= 0V
2.0
1.2
1 0
A
A
5

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