IRF7902TRPBF International Rectifier, IRF7902TRPBF Datasheet - Page 3
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IRF7902TRPBF
Manufacturer Part Number
IRF7902TRPBF
Description
MOSFET DUAL N-CH 30V 9.7A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7902TRPBF.pdf
(10 pages)
Specifications of IRF7902TRPBF
Package / Case
8-SOIC (3.9mm Width)
Mounting Type
Surface Mount
Power - Max
1.4W, 2W
Fet Type
2 N-Channel (Dual)
Gate Charge (qg) @ Vgs
6.9nC @ 4.5V
Vgs(th) (max) @ Id
2.25V @ 25µA
Current - Continuous Drain (id) @ 25° C
6.4A, 9.7A
Drain To Source Voltage (vdss)
30V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
22.6 mOhm @ 6.4A, 10V
Configuration
Dual
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
18.7 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
9.7 A
Power Dissipation
2.0 W
Mounting Style
SMD/SMT
Gate Charge Qg
4.6 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7902TRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
0.01
100
100
100
0.1
0.1
0.1
10
10
10
1
1
1
Fig 1. Typical Output Characteristics
0.1
0.1
Fig 5. Typical Transfer Characteristics
1
Fig 3. Typical Output Characteristics
T J = 150°C
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
2
2.5V
1
1
2.5V
Q1 - Control FET
T J = 25°C
3
≤ 60µs PULSE WIDTH
Tj = 25°C
≤ 60µs PULSE WIDTH
Tj = 150°C
V DS = 15V
≤60µs PULSE WIDTH
10
10
4
TOP
BOTTOM
TOP
BOTTOM
100
100
5
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
Typical Characteristics
1000
1000
6
100
100
100
Fig 2. Typical Output Characteristics
0.1
0.1
10
10
10
1
1
1
0.1
0.1
Fig 6. Typical Transfer Characteristics
1
Fig 4. Typical Output Characteristics
T J = 150°C
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
2
2.5V
Q2 - Synchronous FET
1
2.5V
1
T J = 25°C
3
≤ 60µs PULSE WIDTH
Tj = 150°C
≤ 60µs PULSE WIDTH
Tj = 25°C
V DS = 15V
≤60µs PULSE WIDTH
10
10
4
TOP
BOTTOM
TOP
BOTTOM
100
100
5
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
1000
1000
6
3