IRF7752TRPBF International Rectifier, IRF7752TRPBF Datasheet - Page 2
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IRF7752TRPBF
Manufacturer Part Number
IRF7752TRPBF
Description
MOSFET N-CH DUAL 30V 4.6A 8TSSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7752TRPBF.pdf
(7 pages)
Specifications of IRF7752TRPBF
Package / Case
8-TSSOP
Mounting Type
Surface Mount
Power - Max
1W
Fet Type
2 N-Channel (Dual)
Gate Charge (qg) @ Vgs
9nC @ 4.5V
Vgs(th) (max) @ Id
2V @ 250µA
Current - Continuous Drain (id) @ 25° C
4.6A
Drain To Source Voltage (vdss)
30V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 4.6A, 10V
Configuration
Dual
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
36 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
4.6 A
Power Dissipation
1 W
Mounting Style
SMD/SMT
Gate Charge Qg
9 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7752TRPBF
Manufacturer:
MAXIM
Quantity:
1 001
Part Number:
IRF7752TRPBF
Manufacturer:
IR
Quantity:
20 000
Source-Drain Ratings and Characteristics
IRF7752
Electrical Characteristics @ T
Notes:
I
I
V
t
Q
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
R
I
SM
S
rr
d(on)
r
d(off)
f
I
DSS
V
fs
SD
(BR)DSS
GS(th)
GSS
iss
oss
rss
rr
g
gs
gd
DS(on)
Repetitive rating; pulse width limited by
Pulse width
(BR)DSS
max. junction temperature.
2
/ T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
300µs; duty cycle
Parameter
Parameter
2%.
J
= 25°C (unless otherwise specified)
When mounted on 1 inch square copper board, t<10 sec
Min. Typ. Max. Units
Min. Typ. Max. Units
0.60 –––
–––
–––
–––
–––
–––
––– 0.030 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
30
12
–––
–––
–––
––– 0.030
––– 0.036
–––
–––
–––
–––
861
210
–––
––– -200
9.0
7.2
2.5
2.6
9.1
25
23
25
11
25
–––
–––
–––
–––
100
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.3
2.0
0.91
37
20
V/°C
nC
µA
nA
nC
ns
pF
ns
V
V
V
S
A
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
MOSFET symbol
integral reverse
ƒ = 1.0MHz
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
G
= 4.6A
= 1.0A
= 25°C, I
= 25°C, I
= 6.0
= 0V, I
= 10V, I
= 4.5V, I
= V
= 10V, I
= 24V, V
= 24V, V
= 24V
= 15V
= 0V
= 25V
= -12V
= 12V
= 4.5V
= 10V
GS
Conditions
, I
D
S
F
D
D
D
Conditions
= -250µA
D
GS
GS
= 0.91A
= 0.91A, V
= 250µA
= 4.6A
= 4.6A
= 3.9A
= 0V
= 0V, T
D
www.irf.com
= 1mA
J
GS
= 125°C
G
= 0V
D
S