IRF7752TRPBF International Rectifier, IRF7752TRPBF Datasheet - Page 3
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IRF7752TRPBF
Manufacturer Part Number
IRF7752TRPBF
Description
MOSFET N-CH DUAL 30V 4.6A 8TSSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7752TRPBF.pdf
(7 pages)
Specifications of IRF7752TRPBF
Package / Case
8-TSSOP
Mounting Type
Surface Mount
Power - Max
1W
Fet Type
2 N-Channel (Dual)
Gate Charge (qg) @ Vgs
9nC @ 4.5V
Vgs(th) (max) @ Id
2V @ 250µA
Current - Continuous Drain (id) @ 25° C
4.6A
Drain To Source Voltage (vdss)
30V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 4.6A, 10V
Configuration
Dual
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
36 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
4.6 A
Power Dissipation
1 W
Mounting Style
SMD/SMT
Gate Charge Qg
9 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7752TRPBF
Manufacturer:
MAXIM
Quantity:
1 001
Part Number:
IRF7752TRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
0.01
100
0.1
10
100
1
10
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
0.01
2.0
T = 150 C
J
2.3
V
V DS , Drain-to-Source Voltage (V)
GS
0.1
°
, Gate-to-Source Voltage (V)
2.7
T = 25 C
J
20µs PULSE WIDTH
Tj = 25°C
3.0
1
2.3V
°
V
20µs PULSE WIDTH
DS
3.3
= 15V
TOP
BOTTOM 2.3V
10
3.7
VGS
10.0V
5.0V
4.5V
3.3V
3.0V
2.7V
2.5V
4.0
100
100
0.1
10
1
2.0
1.5
1.0
0.5
0.0
0.01
-60 -40 -20
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
I =
D
4.6A
V DS , Drain-to-Source Voltage (V)
T , Junction Temperature ( C)
J
0.1
Vs. Temperature
0
20
20µs PULSE WIDTH
Tj = 150°C
40
1
2.3V
60
IRF7752
80 100 120 140 160
10
TOP
BOTTOM 2.3V
V
°
GS
=
10V
VGS
10.0V
5.0V
4.5V
3.3V
3.0V
2.7V
2.5V
3
100