STS9D8NH3LL STMicroelectronics, STS9D8NH3LL Datasheet - Page 8
![MOSFET DUAL N-CHAN 30V 9A 8-SOIC](/photos/1/38/13851/497-8-soic_sml.jpg)
STS9D8NH3LL
Manufacturer Part Number
STS9D8NH3LL
Description
MOSFET DUAL N-CHAN 30V 9A 8-SOIC
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STS9D8NH3LL.pdf
(14 pages)
Specifications of STS9D8NH3LL
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
22 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8A, 9A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 4.5V
Input Capacitance (ciss) @ Vds
857pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.022 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
8 A, 9 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6030-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STS9D8NH3LL
Manufacturer:
ST
Quantity:
20 000
Figure 14. Gate charge vs gate-source voltage
Figure 16. Capacitance variations for Q1
Figure 18. Normalized gate threshold voltage
Electrical characteristics
8/14
for Q1
vs temperature for Q1
Figure 15. Gate charge vs gate-source voltage
Figure 17. Capacitance variations for Q2
Figure 19. Normalized gate threshold voltage
for Q2
vs temperature for Q2
STS9D8NH3LL