BSO615C G Infineon Technologies, BSO615C G Datasheet - Page 11
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BSO615C G
Manufacturer Part Number
BSO615C G
Description
MOSFET N/P-CH 60V 3.1A/2A 8SOIC
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSO615C_G.pdf
(13 pages)
Specifications of BSO615C G
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
110 mOhm @ 3.1A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
3.1A, 2A
Vgs(th) (max) @ Id
2V @ 20µA
Gate Charge (qg) @ Vgs
22.5nC @ 10V
Input Capacitance (ciss) @ Vds
380pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
110 m Ohms / 300 m Ohms
Drain-source Breakdown Voltage
+ 60 V / - 60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.1 A, - 2 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Package
SO-8
Vds (max)
60.0 V-60.0 V
Id (max)
3.1 A-2.0 A
Idpuls (max)
12.4 A-8.0 A
Rds (on) (max) (@10v)
110.0 mOhm300.0 mOhm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BSO615C
BSO615C G
BSO615CGT
BSO615CGXT
BSO615CINTR
SP000216311
BSO615C G
BSO615CGT
BSO615CGXT
BSO615CINTR
SP000216311
Avalanche Energy E
parameter: I
R
Typ. gate charge (N-Ch.)
V
parameter: I
GS
GS
mJ
V
= f ( Q
50
40
35
30
25
20
15
10
16
12
10
= 25
5
0
8
6
4
2
0
25
0
BSO 615 C
2
W
45
Gate
D
D
4
0,2
= 3.1 A , V
= 3.1 A
)
65
V
6
DS max
8
85
AS
10
= f ( T
105
DD
12
= 25 V
14
j
125
) (N-Ch.)
0,8
16
V
Rev. 2.0
°C
DS max
nC
Q
T
j
Gate
165
20
Page 11
Avalanche Energy E
parameter: I
R
Typ. gate charge (P-Ch.)
V
parameter: I
GS
GS
mJ
-16
-12
-10
V
80
60
50
40
30
20
10
= f ( Q
= 25
-8
-6
-4
-2
0
0
25
0
BSO 615 C
2
W
45
Gate
D
D
4
= -2 A , V
= -2 A
0,2
)
65
V
6
DS max
8
85
AS
10
DD
= f ( T
105
12
= -25 V
BSO 615 C G
j
14
125
)
0,8
2006-08-25
16 nC
V
°C
DS max
Q
T
Gate
j
165
20