BSO615C G Infineon Technologies, BSO615C G Datasheet - Page 2
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BSO615C G
Manufacturer Part Number
BSO615C G
Description
MOSFET N/P-CH 60V 3.1A/2A 8SOIC
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSO615C_G.pdf
(13 pages)
Specifications of BSO615C G
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
110 mOhm @ 3.1A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
3.1A, 2A
Vgs(th) (max) @ Id
2V @ 20µA
Gate Charge (qg) @ Vgs
22.5nC @ 10V
Input Capacitance (ciss) @ Vds
380pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
110 m Ohms / 300 m Ohms
Drain-source Breakdown Voltage
+ 60 V / - 60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.1 A, - 2 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Package
SO-8
Vds (max)
60.0 V-60.0 V
Id (max)
3.1 A-2.0 A
Idpuls (max)
12.4 A-8.0 A
Rds (on) (max) (@10v)
110.0 mOhm300.0 mOhm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BSO615C
BSO615C G
BSO615CGT
BSO615CGXT
BSO615CINTR
SP000216311
BSO615C G
BSO615CGT
BSO615CGXT
BSO615CINTR
SP000216311
Static Characteristics, at T
Drain- source breakdown voltage
V
V
Gate threshold voltage, V
I
I
Zero gate voltage drain current
V
V
V
V
Gate-source leakage current
V
V
Drain-source on-state resistance
V
V
Drain-source on-state resistance
V
V
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Termal Characteristics
Parameter
Dynamic Characteristics
Thermal resistance, junction - soldering point
( Pin 4)
SMD version, device on PCB:
@ min. footprint; t
@ 6 cm
@ min. footprint; t
@ 6 cm
D
D
GS
GS
DS
DS
DS
DS
GS
GS
GS
GS
GS
GS
= 20 µA
= -450 µA
= 60 V, V
= 60 V, V
= -60 V, V
= -60 V, V
= 0 V, I
= 0 V, I
= 20 V, V
= -20 V, V
= 4.5 V, I
= -4.5 V, I
= 10 V, I
= -10 V , I
2
2
cooling area
cooling area
D
D
D
D
= 250 µA
= -250 µA
GS
GS
DS
D
D
GS
GS
DS
= 3.1 A
= 2.7 A
= -1.7 A
= -2 A
= 0 V, T
= 0 V, T
= 0 V
= 0 V, T
= 0 V, T
= 0 V
£
£
10 sec.
10 sec.
1)
1)
; t
; t
j
j
GS
j
j
= 25 °C
= 125 °C
£
£
= 25 °C
= 125 °C
j
10 sec.
10 sec.
= V
= 25 °C, unless otherwise specified
DS
Rev. 2.0
Page 2
N
P
N
P
N
N
P
P
N
P
N
P
N
P
N
P
N
N
P
P
V
V
I
I
R
R
Symbol
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
DS(on)
thJS
thJA
min.
-60
1.2
60
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
0.27
0.07
0.19
-1.5
-0.1
typ.
1.6
0.1
-10
-10
0.1
10
10
-
-
-
-
-
-
-
-
BSO 615 C G
2006-08-25
-100
-100
max.
0.15
0.45
0.11
62.5
62.5
-2.0
100
100
100
110
2.0
0.3
40
40
-1
1
-
-
V
µA
nA
W
Unit
K/W