BSO615C G Infineon Technologies, BSO615C G Datasheet - Page 5
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BSO615C G
Manufacturer Part Number
BSO615C G
Description
MOSFET N/P-CH 60V 3.1A/2A 8SOIC
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSO615C_G.pdf
(13 pages)
Specifications of BSO615C G
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
110 mOhm @ 3.1A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
3.1A, 2A
Vgs(th) (max) @ Id
2V @ 20µA
Gate Charge (qg) @ Vgs
22.5nC @ 10V
Input Capacitance (ciss) @ Vds
380pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
110 m Ohms / 300 m Ohms
Drain-source Breakdown Voltage
+ 60 V / - 60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.1 A, - 2 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Package
SO-8
Vds (max)
60.0 V-60.0 V
Id (max)
3.1 A-2.0 A
Idpuls (max)
12.4 A-8.0 A
Rds (on) (max) (@10v)
110.0 mOhm300.0 mOhm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BSO615C
BSO615C G
BSO615CGT
BSO615CGXT
BSO615CINTR
SP000216311
BSO615C G
BSO615CGT
BSO615CGXT
BSO615CINTR
SP000216311
Power Dissipation (N-Ch.)
P
Drain current (N-Ch.)
I
parameter: V
D
tot
= f ( T
W
A
= f ( T
2.2
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
3.4
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0
0
BSO 615 C
BSO 615 C
A
)
A
20
20
)
GS
40
40
³
10 V
60
60
80
80
100
100
120
120
Rev. 2.0
°C
°C
T
T
A
A
160
160
Page 5
Power Dissipation (P-Ch.)
P
Drain current (P-Ch.)
I
parameter: V
D
tot
= f ( T
W
-2.2
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
= f ( T
2.2
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0
A
0
0
BSO 615 C
BSO 615 C
A
)
A
20
20
)
GS
40
40
³
-10 V
60
60
80
80
100
100
BSO 615 C G
120
120
2006-08-25
°C
°C
T
T
A
A
160
160