FDC6000NZ Fairchild Semiconductor, FDC6000NZ Datasheet - Page 3

• Manufacturer Part Number: FDC6000NZ
• Description: MOSFET N-CH DUAL 20V 6.5A 6SSOT
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC6000NZ

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 6.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.3A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 840pF @ 10V
• Power - Max: 1.2W
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT FLMP, SuperSOT-6 FLMP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC6000NZTR; FDC6000NZ_NL; FDC6000NZ_NLTR; FDC6000NZ_NLTR

NOTES:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
4. Electrical characterization and datasheet limits was based on a single source configuration (pin 2 & 5 no connection).
Symbol
Drain–Source Diode Characteristics and Maximum Ratings
t
Q
rr
Electrical Characteristics
the
drain pins. R
rr
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJC
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
is guaranteed by design while R
Parameter
a)
θCA
68°C/W when
mounted on a 1in
of 2 oz copper (Single
Operation).
is determined by the user's board design.
T
2
A
I
pad
F
= 25°C unless otherwise noted
= 6.5 A, d
Test Conditions
iF
/d
t
= 100 A/µs
Min
b)
102°C/W when mounted
on a minimum pad of 2 oz
copper (Single Operation).
Typ Max Units
4.3
16
FDC6000NZ RevE1 (W)
nS
nC