FDS4885C Fairchild Semiconductor, FDS4885C Datasheet - Page 4
![MOSFET N/P-CH DUAL 40V 8SOIC](/photos/5/42/54236/261-8-soic_sml.jpg)
FDS4885C
Manufacturer Part Number
FDS4885C
Description
MOSFET N/P-CH DUAL 40V 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS4885C.pdf
(8 pages)
Specifications of FDS4885C
Fet Type
N and P-Channel
Fet Feature
Standard
Rds On (max) @ Id, Vgs
22 mOhm @ 7.5A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
7.5A, 6A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
21nC @ 10V
Input Capacitance (ciss) @ Vds
900pF @ 20V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.017 Ohms
Forward Transconductance Gfs (max / Min)
14 S, 19 S
Drain-source Breakdown Voltage
+/- 40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7.5 A, - 6 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS4885C
Manufacturer:
Fairchild Semiconductor
Quantity:
135
Company:
Part Number:
FDS4885C-NL
Manufacturer:
FAIRCHILD
Quantity:
12 500
Typical Characteristics: Q1 (N-Channel)
1.8
1.6
1.4
1.2
0.8
0.6
50
45
40
35
30
25
20
15
10
20
16
12
Figure 3. On-Resistance Variation with
5
0
8
4
0
1
Figure 1. On-Region Characteristics.
-50
3
0
Figure 5. Transfer Characteristics.
V
V
DS
GS
V
I
D
GS
= 5V
= 10V
= 7.5A
-25
= 10V
0.25
4
V
V
T
GS
DS
8.0V
0
J
, GATE TO SOURCE VOLTAGE (V)
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
Temperature.
0.5
5
25
7.0V
0.75
50
6
6.5V
T
A
= -55
75
1
7
o
C
6.0V
100
o
C)
125
1.25
8
o
C
125
5.5V
25
o
C
1.5
150
9
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.075
0.065
0.055
0.045
0.035
0.025
0.015
0.001
0.01
4.2
3.8
3.4
2.6
2.2
1.8
1.4
0.6
100
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
0.1
10
3
1
1
5
0
0
Drain Current and Gate Voltage.
V
V
GS
GS
= 6.0V
= 0V
Gate-to-Source Voltage.
0.2
V
SD
6
4
V
, BODY DIODE FORWARD VOLTAGE (V)
T
GS
T
6.5V
A
A
, GATE TO SOURCE VOLTAGE (V)
= 25
= 125
I
0.4
D
o
, DRAIN CURRENT (A)
C
o
C
7
8
T
7.0V
A
= 125
25
0.6
o
C
o
C
12
8
8.0V
0.8
-55
o
C
FDS4885C Rev D(W)
16
9
1
I
D
10V
= 3.8A
1.2
20
10