FDS4885C Fairchild Semiconductor, FDS4885C Datasheet - Page 7

• Manufacturer Part Number: FDS4885C
• Description: MOSFET N/P-CH DUAL 40V 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS4885C

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 7.5A, 6A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Input Capacitance (ciss) @ Vds: 900pF @ 20V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.017 Ohms
• Forward Transconductance Gfs (max / Min): 14 S, 19 S
• Drain-source Breakdown Voltage: +/- 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.5 A, - 6 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics: Q2 (P-Channel)
0.01
100
0.1
10
10
Figure 19. Maximum Safe Operating Area.
8
6
4
2
0
1
Figure 17. Gate Charge Characteristics.
0.1
0
0.001
0.01
R
I
0.1
D
DS(ON)
SINGLE PULSE
0.0001
R
= -6A
1
V
JA
T
GS
A
= 135
LIMIT
= 25
5
= -10V
D = 0.5
0.2
0.1
o
o
C/W
C
0.05
-V
0.02
DS
0.01
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE
10
Q
1
g
, GATE CHARGE (nC)
0.001
DC
10s
15
1s
Figure 21. Transient Thermal Response Curve.
100ms
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
V
DS
= -10V
10ms
20
10
0.01
1ms
-30V
25
100
-20V
100
30
0.1
t
1
, TIME (sec)
2000
1600
1200
800
400
50
40
30
20
10
0
0
0.001
Figure 18. Capacitance Characteristics.
0
C
Figure 20. Single Pulse Maximum
RSS
1
5
0.01
C
-V
Power Dissipation.
OSS
10
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.1
15
10
C
t
1
ISS
, TIME (sec)
20
1
P(pk)
25
Duty Cycle, D = t
T
R
10
J
R
- T
100
JA
JA
(t) = r(t) * R
A
t
SINGLE PULSE
30
R
= 135
1
= P * R
t
JA
2
T
FDS4885C Rev D(W)
A
= 135°C/W
100
= 25°C
o
f = 1 MHz
V
C/W
35
GS
JA
1
= 0 V
JA
(t)
/ t
2
1000
1000
40