FDS4885C Fairchild Semiconductor, FDS4885C Datasheet - Page 7
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FDS4885C
Manufacturer Part Number
FDS4885C
Description
MOSFET N/P-CH DUAL 40V 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS4885C.pdf
(8 pages)
Specifications of FDS4885C
Fet Type
N and P-Channel
Fet Feature
Standard
Rds On (max) @ Id, Vgs
22 mOhm @ 7.5A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
7.5A, 6A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
21nC @ 10V
Input Capacitance (ciss) @ Vds
900pF @ 20V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.017 Ohms
Forward Transconductance Gfs (max / Min)
14 S, 19 S
Drain-source Breakdown Voltage
+/- 40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7.5 A, - 6 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS4885C
Manufacturer:
Fairchild Semiconductor
Quantity:
135
Company:
Part Number:
FDS4885C-NL
Manufacturer:
FAIRCHILD
Quantity:
12 500
Typical Characteristics: Q2 (P-Channel)
0.01
100
0.1
10
10
Figure 19. Maximum Safe Operating Area.
8
6
4
2
0
1
Figure 17. Gate Charge Characteristics.
0.1
0
0.001
0.01
R
I
0.1
D
DS(ON)
SINGLE PULSE
0.0001
R
= -6A
1
V
JA
T
GS
A
= 135
LIMIT
= 25
5
= -10V
D = 0.5
0.2
0.1
o
o
C/W
C
0.05
-V
0.02
DS
0.01
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE
10
Q
1
g
, GATE CHARGE (nC)
0.001
DC
10s
15
1s
Figure 21. Transient Thermal Response Curve.
100ms
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
V
DS
= -10V
10ms
20
10
0.01
1ms
-30V
25
100
-20V
100
30
0.1
t
1
, TIME (sec)
2000
1600
1200
800
400
50
40
30
20
10
0
0
0.001
Figure 18. Capacitance Characteristics.
0
C
Figure 20. Single Pulse Maximum
RSS
1
5
0.01
C
-V
Power Dissipation.
OSS
10
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.1
15
10
C
t
1
ISS
, TIME (sec)
20
1
P(pk)
25
Duty Cycle, D = t
T
R
10
J
R
- T
100
JA
JA
(t) = r(t) * R
A
t
SINGLE PULSE
30
R
= 135
1
= P * R
t
JA
2
T
FDS4885C Rev D(W)
A
= 135°C/W
100
= 25°C
o
f = 1 MHz
V
C/W
35
GS
JA
1
= 0 V
JA
(t)
/ t
2
1000
1000
40