FDR8308P Fairchild Semiconductor, FDR8308P Datasheet - Page 143
FDR8308P
Manufacturer Part Number
FDR8308P
Description
MOSFET P-CH DUAL 20V 3.2A SSOT-8
Manufacturer
Fairchild Semiconductor
Datasheet
1.EGP10A.pdf
(214 pages)
Specifications of FDR8308P
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 3.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.2A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
19nC @ 4.5V
Input Capacitance (ciss) @ Vds
1240pF @ 10V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
8-SSOT, SuperSOT-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDR8308P
FDR8308PTR
FDR8308PTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDR8308P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDR8308P*
Manufacturer:
HAMAMATSU
Quantity:
1
- Current page: 143 of 214
- Download datasheet (4Mb)
www.fairchildsemi.com
Schottky Diodes and Rectifiers (Continued)
FYPF0545S
FYPF1004DN
FYPF1010DN
FYPF1045DN
FYPF1504DN
FYPF1545DN
FYPF2004DN
FYPF2006DN
FYPF2010DN
FYPF2045DN
MBR3035PT
MBR3045PT
MBR3050PT
MBR3060PT
MBR4035PT
MBR4045PT
MBR4050PT
MBR4060PT
FYD0504SA
MBRA3045N
TO-220F
TO-247
TO-252(DPAK)
TO-3P
Products
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Function
Configuration
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Single
Single
I
100
100
100
150
200
150
200
200
200
200
400
400
400
400
200
(A)
FSM
80
80
80
80
80
2-138
(°C/W)
R
60
60
60
60
60
60
60
60
θJA
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
V
100
100
RRM
(V)
45
40
45
40
45
40
60
45
35
45
50
60
35
45
50
60
40
45
Bold = New Products (introduced January 2003 or later)
I
F (AV)
(A)
10
10
10
15
15
20
20
20
10
30
30
30
30
40
40
40
40
30
5
5
V
Diodes and Rectifiers
FM
0.55
0.55
0.75
0.55
0.55
0.55
0.55
0.58
0.77
0.55
0.76
0.76
0.75
0.75
0.72
0.72
0.55
(V)
0.7
0.7
0.8
Max
(µA) @V
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
5000
5000
1000
1000
1000
1000
1000
1000
100
I
RM
Max
100
100
45
40
45
40
45
40
60
45
35
45
50
60
35
45
50
60
40
45
R
(V)
Related parts for FDR8308P
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: