FDR8308P Fairchild Semiconductor, FDR8308P Datasheet - Page 24
FDR8308P
Manufacturer Part Number
FDR8308P
Description
MOSFET P-CH DUAL 20V 3.2A SSOT-8
Manufacturer
Fairchild Semiconductor
Datasheet
1.EGP10A.pdf
(214 pages)
Specifications of FDR8308P
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 3.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.2A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
19nC @ 4.5V
Input Capacitance (ciss) @ Vds
1240pF @ 10V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
8-SSOT, SuperSOT-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDR8308P
FDR8308PTR
FDR8308PTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDR8308P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDR8308P*
Manufacturer:
HAMAMATSU
Quantity:
1
- Current page: 24 of 214
- Download datasheet (4Mb)
www.fairchildsemi.com
SO-8 (Continued)
FDS4435A
FDS4435
FDS6685
SI4835DY
NDS8435A
FDS6609A
FDS9435A
NDS9435A
NDS9430
FDS9400A
NDS9400A
FDS6875
FDS8934A
FDS9933
FDS9933A
NDS9933A
FDS4465
SI4463DY
FDS6575
FDS6576
FDS6375
FDS8433A
FDS9431A
Products
Min. (V)
BV
-30
-30
-30
-30
-30
-30
-30
-30
-30
-30
-30
-20
-20
-20
-20
-20
-20
-20
-20
-20
-20
-20
-20
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Dual
Dual
Dual
Dual
Dual
0.017
0.023
0.032
10V
0.02
0.02
0.02
0.05
0.05
0.06
0.13
–
–
–
–
–
–
–
–
–
–
–
–
R
DS(ON)
2-19
0.0085
0.025
0.035
0.035
0.055
0.075
0.013
0.024
4.5V
0.035
0.035
0.055
0.012
0.014
0.047
0.05
0.08
0.08
0.03
0.14
0.13
0.1
0.2
Max (Ω) @ V
0.0105
0.0175
0.072
0.105
0.017
0.032
2.5V
GS
0.04
0.09
0.02
0.07
0.18
0.2
Replaced by FDS9400A
Bold = New Products (introduced January 2003 or later)
–
–
–
–
–
–
–
–
–
–
=
Discrete Power Products –
0.014
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Q
@V
g
Typ. (nC)
GS
2.4
21
17
19
19
48
18
10
10
10
23
20
10
86
41
50
43
23
20
8
6
6
= 5V
I
D
13.5
11.5
8.8
8.8
8.8
7.9
5.3
5.3
5.3
3.4
3.8
2.8
3.5
10
11
9
6
6
4
5
8
5
(A)
MOSFETs
P
D
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2
2
2
2
2
(W)
Related parts for FDR8308P
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: