IRF7341QTRPBF International Rectifier, IRF7341QTRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7341QTRPBF
• Description: MOSFET N-CH DUAL 55V 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7341QTRPBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 5.1A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Input Capacitance (ciss) @ Vds: 780pF @ 25V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7341QTRPBFCT

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Source-Drain Ratings and Characteristics
‚
Electrical Characteristics @ T
I
I
V
t
Q
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
S
SM
R
I
rr
d(on)
r
d(off)
f
DSS
2
fs
SD
(BR)DSS
GS(th)
rr
g
gs
gd
iss
oss
rss
Repetitive rating; pulse width limited by
DS(on)
Pulse width ≤ 300µs duty cycle ≤
(BR)DSS
max. junction temperature.
/∆T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
10.4 –––
–––
–––
––– 0.052 –––
––– 0.043 0.050
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 12.5
–––
–––
–––
1.0
55
ƒ
0.056 0.065
Surface mounted on FR-4 board, ≤ 10sec
–––
–––
–––
–––
–––
–––
––– -100
780
190
2.9
7.3
9.2
7.7
51
76
29
31
66
114
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
42
1.2
4.4
2.4
2.0
77
25
44
11
V/°C
nC
nC
ns
pF
V
V
Ω
V
S
MOSFET symbol
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
showing the
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
G
= 5.2A
= 1.0A
= 25°C, I
= 25°C, I
= 6.0Ω
= V
= 10V, I
= 44V, V
= 44V, V
= 44V
= 25V
= 0V, I
= 10V, I
= 4.5V, I
= 20V
= -20V
= 10V
= 28V
= 10V
= 0V
GS
Conditions
, I
D
‚
S
F
D
D
D
Conditions
= 250µA
D
GS
GS
= 2.6A, V
= 2.6A
= 250µA
= 5.2A
= 5.1A
= 4.42A
‚
= 0V
= 0V, T
D
www.irf.com
‚
= 1mA
GS
G
‚
J
= 150°C
= 0V
‚
D
S