IRF7341QTRPBF International Rectifier, IRF7341QTRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7341QTRPBF
• Description: MOSFET N-CH DUAL 55V 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7341QTRPBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 5.1A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Input Capacitance (ciss) @ Vds: 780pF @ 25V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7341QTRPBFCT

4
1400
1200
1000
800
600
400
200
0
100
0.1
10
Fig 5. Typical Capacitance Vs.
1
Fig 7. Typical Source-Drain Diode
1
0.2
Drain-to-Source Voltage
V
V DS , Drain-to-Source Voltage (V)
SD
Forward Voltage
0.5
T = 175 C
,Source-to-Drain Voltage (V)
J
V GS = 0V,
C iss
SHORTED
C rss
C oss = C ds + C gd
°
= C gd
10
0.8
= C gs + C gd ,
Ciss
Coss
Crss
f = 1 MHZ
T = 25 C
J
1.1
V
GS
°
= 0 V
C ds
100
1.4
1000
100
20
16
12
0.1
Fig 8. Maximum Safe Operating Area
10
8
4
0
1
0
0.1
I =
Fig 6. Typical Gate Charge Vs.
D
T
T
Single Pulse
C
J
= 25 C
= 175 C
5.2A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
10
DS
Q , Total Gate Charge (nC)
°
°
G
, Drain-to-Source Voltage (V)
1
20
BY R
V
V
V
DS
DS
DS
10
DS(on)
= 44V
= 27V
= 11V
30
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100us
1ms
10ms
100
40
1000
50