NTJD2152PT1 ON Semiconductor, NTJD2152PT1 Datasheet
NTJD2152PT1
Specifications of NTJD2152PT1
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NTJD2152PT1 Summary of contents
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NTJD2152P Trench Small Signal MOSFET 8 V, Dual P−Channel, SC−88 ESD Protection Features • Leading –8 V Trench for Low R DS(ON) • ESD Protected Gate • Small Footprint ( mm) • Same Package as SC−70−6 • Pb−Free ...
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ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES AND CAPACITANCES ...
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TYPICAL PERFORMANCE CURVES 1 −4 −2 −2 1.2 − 0.8 0.6 0.4 0 −V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.5 ...
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TYPICAL PERFORMANCE CURVES 5 Q G(TOT 0.4 0.8 1.2 1 TOTAL GATE CHARGE (nC) g Figure 7. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge (T = 25°C ...
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... ORDERING INFORMATION Device Order Number NTJD2152PT1 NTJD2152PT1G NTJD2152PT2 NTJD2152PT2G NTJD2152PT4 NTJD2152PT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi- cations Brochure, BRD8011/D. Package Type SOT−363 SOT−363 (Pb−Free) SOT− ...
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... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...