2N7002W-7-F Diodes Inc, 2N7002W-7-F Datasheet - Page 2

• Manufacturer Part Number: 2N7002W-7-F
• Description: MOSFET N-CH 60V 115MA SOT323
• Manufacturer: Diodes Inc

Specifications of 2N7002W-7-F

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 115mA
• Vgs(th) (max) @ Id: 2V @ 250µA
• Input Capacitance (ciss) @ Vds: 50pF @ 25V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.5 Ohm @ 5 V
• Forward Transconductance Gfs (max / Min): 0.08 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.115 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 800mA
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 13.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2N7002W-FDITR

Electrical Characteristics
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
@ T
Gate-Body Leakage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
@ T
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Notes:
2N7002W
Document number: DS30099 Rev. 14 - 2
C
j
= 125°C
= 125°C
1.0
0.8
0.4
0.6
0.2
3. Short duration pulse test used to minimize self-heating effect.
3.5
3.0
2.5
1.5
1.0
0.5
0.0
2.0
0
0
-55
Fig. 3 On-Resistance vs. Junction Temperature
-30
V , DRAIN-SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE ( C)
DS
Fig. 1 On-Region Characteristics
1
J
Characteristic
-5
20
2
45
@T
70
3
A
@ T
@ T
= 25°C unless otherwise specified
95
C
J
= 25°C
= 25°C
120 145 170
4
°
5
Symbol
www.diodes.com
R
BV
V
t
I
t
D(OFF)
DS(ON)
C
I
I
D(ON)
D(ON)
C
C
GS(th)
g
GSS
DSS
FS
oss
DSS
iss
rss
2 of 3
Min
1.0
0.5
60
80
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
1.8
2.6
1.0
2.0
7.0
22
11
11
70
⎯
⎯
⎯
⎯
7
6
5
4
3
2
0
6
5
4
3
2
1
0
1
0
0
Fig. 4 On-Resistance vs. Gate-Source Voltage
13.5
Max
500
±10
1.0
2.0
7.5
5.0
Fig. 2 On-Resistance vs. Drain Current
⎯
⎯
50
25
20
20
2
⎯
V
GS
0.2
, GATE TO SOURCE VOLTAGE (V)
4
I , DRAIN CURRENT (A)
Unit
D
mS
μA
nA
pF
pF
pF
ns
ns
Ω
V
V
A
6
0.4
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
R
R
GS
DS
GS
DS
GS
GS
GS
DS
DS
DD
L
GEN
8
= 150Ω, V
= 60V, V
= V
= 10V, I
= 25V, V
= 0V, I
= ±20V, V
= 5.0V, I
= 10V, I
= 10V, V
= 30V, I
= 25Ω
10
GS
0.6
, I
Test Condition
D
D
D
D
D
12
= 10μA
D
GS
GS
DS
GEN
= 250μA
= 0.5A
= 0.2A
= 0.2A,
DS
= 0.05A
= 0V
= 7.5V
= 0V
= 0V
= 10V,
14
0.8
2N7002W
© Diodes Incorporated
16
August 2008
1.0
18