2N7002W Fairchild Semiconductor, 2N7002W Datasheet

MOSFET N-CH 60V 115MA SOT-323

2N7002W

Manufacturer Part Number
2N7002W
Description
MOSFET N-CH 60V 115MA SOT-323
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of 2N7002W

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7.5 Ohm @ 50mA, 5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
115mA
Vgs(th) (max) @ Id
2V @ 250µA
Input Capacitance (ciss) @ Vds
50pF @ 25V
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
7.5 Ohm @ 5 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.115 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2N7002WTR

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2N7002W Rev. A1
© 2010 Fairchild Semiconductor Corporation
2N7002W
N-Channel Enhancement Mode Field Effect Transistor
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.
Symbol
Symbol
T
J ,
V
V
V
R
P
DGR
DSS
GSS
I
T
JA
D
D
STG
Drain-Source Voltage
Drain-Gate Voltage R
Gate-Source Voltage
Drain Current
Junction and Storage Temperature Range
Total Device Dissipation
Derating above T
Thermal Resistance, Junction to Ambient *
A
= 25°C
Parameter
Parameter
GS
D
Marking : 2N
SOT-323
 1.0M
T
Continuous
Continuous @ 100°C
Pulsed
A
G
= 25°C unless otherwise noted
S
Continuous
Pulsed
1
-55 to +150
Value
Value
±20
±40
800
200
625
115
1.6
60
60
73
mW/C
February 2010
Units
Units
www.fairchildsemi.com
C/W
mW
mA
C
V
V
V

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2N7002W Summary of contents

Page 1

... Symbol P Total Device Dissipation D Derating above Thermal Resistance, Junction to Ambient * JA * Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size. © 2010 Fairchild Semiconductor Corporation 2N7002W Rev SOT-323 Marking : 25°C unless otherwise noted A Parameter  1.0M ...

Page 2

... C Reverse Transfer Capacitance rss Switching Characteristics t Turn-On Delay Time D(ON) t Turn-Off Delay Time D(OFF) Note1 : Short duration test pulse used to minimize self-heating effect. © 2010 Fairchild Semiconductor Corporation 2N7002W Rev 25°C unless otherwise noted A Test Condition =0V, I =10uA =60V, V =0V DS ...

Page 3

... J Figure 5. Transfer Characteristics 1 - 10V 0.6 0.4 0.2 0 GATE-SOURCE VOLTAGE (V) GS © 2010 Fairchild Semiconductor Corporation 2N7002W Rev. A1 Figure 2. On-Resistance Variation with Gate 3.0 2.5 4V 2 Figure 4. On-Resistance Variation with 50 100 150 o C) Figure 6. Gate Threshold Variation with 2.5 o 150 C 2 ...

Page 4

... Typical Performance Characteristics Figure 7. Reverse Drain Current Variation with Diode Forward Voltage and Temperature 150 C 100 0.0 0.2 0 Body Diode Forward Voltage [V] SD © 2010 Fairchild Semiconductor Corporation 2N7002W Rev. A1 Figure 8. Power Derating 280 240 200 160 120 o - 0.6 0.8 1 100 ...

Page 5

... Package Dimensions © 2010 Fairchild Semiconductor Corporation 2N7002W Rev. A1 SOT323 5 www.fairchildsemi.com ...

Page 6

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. FRFET AccuPower Auto-SPM Global Power Resource Build it Now Green FPS CorePLUS Green FPS CorePOWER Gmax ...

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