NDS0610 Fairchild Semiconductor, NDS0610 Datasheet
NDS0610
Manufacturer Part Number
NDS0610
Description
MOSFET P-CH 60V 120MA SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.NDS0610.pdf
(5 pages)
Specifications of NDS0610
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
10 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
120mA
Vgs(th) (max) @ Id
3.5V @ 1mA
Gate Charge (qg) @ Vgs
2.5nC @ 10V
Input Capacitance (ciss) @ Vds
79pF @ 25V
Power - Max
360mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
10 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.12 A
Power Dissipation
360 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDS0610TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NDS0610
Manufacturer:
FSC
Quantity:
273 000
Part Number:
NDS0610
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
NDS0610-NL
Manufacturer:
ON/安森美
Quantity:
20 000
NDS0610
P-Channel Enhancement Mode Field Effect Transistor
General Description
These
transistors are produced using Fairchild’s proprietary,
high cell density, DMOS technology. This very high
density process has been designed to minimize on-
state
performance and fast switching. They can be used, with
a minimum of effort, in most applications requiring up to
120mA DC and can deliver current up to 1A.
This product is particularly suited to low voltage
applications requiring a low current high side switch.
2002 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
T
Thermal Characteristics
R
Package Marking and Ordering Information
D
DSS
GSS
D
J
L
, T
JA
Device Marking
STG
resistance,
P-Channel enhancement mode field effect
610
SOT-23
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Derate Above 25 C
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16” from Case for 10 Seconds
Thermal Resistance, Junction-to-Ambient
provide
D
– Continuous
– Pulsed
rugged
NDS0610
G
Device
Parameter
and
S
reliable
T
A
=25
o
C unless otherwise noted
Reel Size
7’’
(Note 1)
(Note 1)
(Note 1)
Features
Voltage controlled p-channel small signal switch
High density cell design for low R
High saturation current
0.12A, 60V.
Tape width
G
8mm
R
R
Ratings
55 to +150
DS(ON)
DS(ON)
0.36
300
350
0.12
2.9
60
20
D
1
= 10
= 20
S
@ V
@ V
DS(ON)
GS
GS
July 2002
3000 units
= 10 V
= 4.5 V
NDS0610 Rev B(W)
Quantity
Units
mW/ C
C/W
W
V
V
A
C
C
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NDS0610 Summary of contents
Page 1
... High density cell design for low R High saturation current =25 C unless otherwise noted A (Note 1) (Note 1) (Note 1) Reel Size 7’’ July 2002 DS(ON 4.5 V DS(ON) GS DS(ON Ratings Units 0.12 1 0.36 W mW +150 C 300 C 350 C/W Tape width Quantity 8mm 3000 units NDS0610 Rev B(W) ...
Page 2
... A/µ determined by the user's board design. CA 2.0% Min Typ Max Units –60 V mV/ C –53 –1 –200 nA 10 –1 –1.7 –3 mV/ C 1.0 10 1.3 20 =125 C 1.7 16 –0 430 2 6 1.8 2.5 nC 0.3 nC 0.4 nC –0.24 A –0.8 –1.5 V (Note (Note NDS0610 Rev B( ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. -3.5V -4.0V -4.5V -6.0V -10V 0.2 0.4 0.6 0 DRAIN CURRENT ( -0.25A 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD NDS0610 Rev B(W) 1.4 10 1.2 ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 350°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( 350 C/W JA P(pk ( Duty Cycle 100 1000 NDS0610 Rev B(W) 60 ...
Page 5
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