FDY102PZ Fairchild Semiconductor, FDY102PZ Datasheet

MOSFET P-CH 20V 830MA SC89-3

FDY102PZ

Manufacturer Part Number
FDY102PZ
Description
MOSFET P-CH 20V 830MA SC89-3
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDY102PZ

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
500 mOhm @ 830mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
830mA
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
3.1nC @ 4.5V
Input Capacitance (ciss) @ Vds
135pF @ 10V
Power - Max
446mW
Mounting Type
Surface Mount
Package / Case
SC-89-3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.5 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.83 A
Power Dissipation
625 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDY102PZTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDY102PZ
Quantity:
5 873
Part Number:
FDY102PZ
Manufacturer:
Fairchild/ON Semiconductor
Quantity:
7 054
©2010 Fairchild Semiconductor Corporation
FDY102PZ Rev.B2
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDY102PZ
Single P-Channel (
–20 V, –0.83 A, 0.5 :
Features
„ Max r
„ Max r
„ Max r
„ Max r
„ HBM ESD protection level = 1400 V (Note 3)
„ RoHS Compliant
V
V
I
P
T
R
R
D
J
DS
GS
D
TJA
TJA
, T
Symbol
Device Marking
STG
DS(on)
DS(on)
DS(on)
DS(on)
E
D
= 0.5 : at V
= 0.7 : at V
= 1.2 : at V
= 1.8 : at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
GS
GS
GS
GS
= –4.5 V, I
= –2.5 V, I
= –1.8 V, I
= –1.5 V, I
FDY102PZ
-Pulsed
S
Device
1.5 V) Specified PowerTrench
D
D
D
D
= –0.83 A
= –0.70 A
= –0.43 A
= –0.36 A
G
SC89-3
T
A
= 25 °C unless otherwise noted
Parameter
Package
SC89-3
1
General Description
This Single P-Channel MOSFET has been designed using
Fairchild Semiconductor’s advanced Power Trench process to
optimize the r
„ Li-Ion Battery Pack
Application
Reel Size
G
S
DS(on)
7 ”
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
1
2
@V
GS
®
= –1.5 V.
MOSFET
Tape Width
8 mm
–55 to +150
Ratings
–0.83
0.625
0.446
–1.0
–20
200
280
±8
3
February 2010
www.fairchildsemi.com
D
3000 units
Quantity
Units
°C/W
°C
W
V
V
A
tm

Related parts for FDY102PZ

FDY102PZ Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient TJA Package Marking and Ordering Information Device Marking Device E FDY102PZ ©2010 Fairchild Semiconductor Corporation FDY102PZ Rev.B2 1.5 V) Specified PowerTrench General Description = –0.83 A This Single P-Channel MOSFET has been designed using D Fairchild Semiconductor’s advanced Power Trench process to = –0.70 A ...

Page 2

... TJA user's board design. 2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0% 3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2010 Fairchild Semiconductor Corporation FDY102PZ Rev. °C unless otherwise noted J Test Conditions = – ...

Page 3

... DUTY CYCLE = 0.5% MAX 0 0 125 C J 0.4 0.2 0.0 0.5 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDY102PZ Rev. °C unless otherwise noted J 4.5 4 3.0 2.5 2.0 1 1.0 0.5 1.5 2.0 2.0 1.6 1.2 ...

Page 4

... 125 GATE TO SOURCE VOLTAGE ( Figure 9. Gate Leakage Current vs Gate to Source Voltage -4 0 Figure 11. Single Pulse Maximum Power Dissipation ©2010 Fairchild Semiconductor Corporation FDY102PZ Rev. °C unless otherwise noted J 500 100 0.1 2.0 2 PULSE WIDTH (sec iss C oss C rss ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 0.1 SINGLE PULSE R 0. Figure 12. ©2010 Fairchild Semiconductor Corporation FDY102PZ Rev. °C unless otherwise noted 280 C RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve NOTES: DUTY FACTOR PEAK TJA ...

Page 6

... Dimensional Outline and Pad Layout 1.70 1.50 3 0.98 0.78 1 (0.15) 0.43 0.28 ©2010 Fairchild Semiconductor Corporation FDY102PZ Rev.B2 0.35 0.25 1.70 1.14 1.50 2 0.50 0.50 LAND PATTERN RECOMMENDATION 1.00 0.78 0.58 SEE DETAIL A 0.54 0.34 0.10 0.00 NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC89 PACKAGING STANDARD ...

Page 7

... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDY102PZ Rev.B2 ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ® Green FPS™ e-Series™ ...

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