FDY100PZ Fairchild Semiconductor, FDY100PZ Datasheet

MOSFET P-CH 20V 350MA SC-89

FDY100PZ

Manufacturer Part Number
FDY100PZ
Description
MOSFET P-CH 20V 350MA SC-89
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDY100PZ

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.2 Ohm @ 350mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
350mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
1.4nC @ 4.5V
Input Capacitance (ciss) @ Vds
100pF @ 10V
Power - Max
446mW
Mounting Type
Surface Mount
Package / Case
SC-89-3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
1.2 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
1 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.35 A
Power Dissipation
625 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
350mA
Drain Source Voltage Vds
20V
On Resistance Rds(on)
1.2ohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-1V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDY100PZTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDY100PZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDY100PZ-NL
Manufacturer:
ON/安森美
Quantity:
20 000
FDY100PZ
Single P-Channel (– 2.5V) Specified PowerTrench
General Description
This Single P-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power
Trench process to optimize the R
Applications
• Li-Ion Battery Pack
©2006 Fairchild Semiconductor Corporation
FDY100PZ Rev A
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
θJA
θJA
, T
D
Device Marking
STG
A
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (Steady State)
Operating and Storage Junction Temperature
Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
– Continuous
– Pulsed
1 S
FDY100PZ
DS(ON)
Parameter
Device
@ V
GS
= – 2.5v.
G
T
A
=25
Reel Size
o
C unless otherwise noted
7’’
(Note 1a) 1a)
(Note 1a) 1a)
(Note 1b) 1b)
(Note 1a) 1a)
(Note 1b) 1b)
Features
• – 350 mA, – 20 V R
• ESD protection diode (note 3)
• RoHS Compliant
G
S
® ® ® ®
Tape width
MOSFET
1
2
–55 to +150
Ratings
8mm
– 1000
– 350
– 20
625
446
200
280
R
± 8
DS(ON)
DS(ON)
= 1.2 Ω @ V
= 1.6 Ω @ V
January 2006
GS
GS
www.fairchildsemi.com
3
3000 units
Quantity
= – 2.5 V
= – 4.5 V
D
Unit
°C/W
mW
mA
°C
s
V
V

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FDY100PZ Summary of contents

Page 1

... Thermal Resistance, Junction-to-Ambient R θJA Thermal Resistance, Junction-to-Ambient R θJA Package Marking and Ordering Information Device Marking Device A FDY100PZ ©2006 Fairchild Semiconductor Corporation FDY100PZ Rev A Features • – 350 mA, – – 2.5v. GS • ESD protection diode (note 3) • RoHS Compliant =25 C unless otherwise noted ...

Page 2

... Diode Reverse Recovery Charge rr Notes the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of θJA the drain pins guaranteed by design while R θJC a) FDY100PZ Rev 25°C unless otherwise noted A Test Conditions = – 250 µ ...

Page 3

... Figure 3. On-Resistance Variation with Temperature -5V DS 0.8 0.6 0 125 0 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics. FDY100PZ Rev A 2.6 V =-1.8V GS 2.2 -2.0V 1.8 1.4 -1.8V 1 0.6 0 1.5 2 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2 1.75 1.5 1. ...

Page 4

... SINGLE PULSE 0.01 0.0001 0.001 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDY100PZ Rev A 150 125 100 rss 0 2 2.5 0 Figure 8 ...

Page 5

... NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC89 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. FDY100PZ Rev A 0.50 1.70 1.14 1.50 0.50 LAND PATTERN RECOMMENDATION 0.78 0.58 SEE DETAIL A ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...

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