DMP2160U-7 Diodes Inc, DMP2160U-7 Datasheet - Page 2

• Manufacturer Part Number: DMP2160U-7
• Description: MOSFET P-CH 20V 3.2A SOT-23
• Manufacturer: Diodes Inc

Specifications of DMP2160U-7

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.2A
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Input Capacitance (ciss) @ Vds: 627pF @ 10V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: DMP2160UDITR

Electrical Characteristics
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage (Note 4)
DYNAMIC CHARACTERISTICS (Note 5)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
DMP2160U
Document number: DS31586 Rev. 4 - 2
10
4. Short duration pulse test used to minimize self-heating effect.
5. Guaranteed by design. Not subject to product testing.
8
6
4
2
0
0
Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
1
V
GS
V
GS
= 2.0V
V
GS
V
= 2.5V
GS
= 3.0V
V
GS
= 3.0V
2
= 3.0V
V
T
GS
@T
J
3
= 25°C
= 1.5V
A
= 25°C unless otherwise specified
4
Symbol
R
BV
V
DS (ON)
t
t
C
I
I
V
C
C
Q
Q
D(on)
D(off)
GS(th)
g
DSS
GSS
R
Q
t
t
FS
SD
oss
DSS
iss
rss
gs
gd
G
r
f
g
5
www.diodes.com
Min
-0.4
-20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2 of 5
44.9
12.5
10.3
46.5
22.2
Typ
-0.6
627
6.5
0.9
1.5
60
73
92
64
53
⎯
⎯
⎯
⎯
⎯
7
10
2
8
6
4
0
0
V
±100
±800
Max
-1.0
-0.9
-1.0
100
140
DS
80
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
= -5V
Fig. 2 Typical Transfer Characteristics
0.5
-V
T = 125°C
GS
A
T = 150°C
A
, GATE SOURCE VOLTAGE (V)
Unit
mΩ
μA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
S
V
1
T = -55°C
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
V
R
A
GS
DS
GS
GS
DS
GS
GS
GS
DS
GS
DS
GS
GS
DS
L
1.5
= 10Ω, R
T = 25°C
= -16V, V
= V
= -10V, I
= -10V, V
= -10V, V
A
= 0V, I
= ±8V, V
= ±12V, V
= -4.5V, I
= -2.5V, I
= -1.8V, I
= 0V, I
= 0V, V
= -4.5V, V
T = 85°C
A
GS
, I
Test Condition
D
S
2
DS
D
G
= -1.0A
= -250μA
D
DS
D
D
D
GS
GS
GS
= -250μA
= 1.0Ω, I
DS
DS
= -1.5A
= 0V, f = 1.0MHz
= -1.5A
= -1.2A
= -1.2A
= 0V
= -4.5V,
= 0V
= 0V
= 0V
= -10V, I
DMP2160U
2.5
© Diodes Incorporated
November 2009
D
= -1A
D
= -3A
3