DMP2160U-7 Diodes Inc, DMP2160U-7 Datasheet - Page 3

• Manufacturer Part Number: DMP2160U-7
• Description: MOSFET P-CH 20V 3.2A SOT-23
• Manufacturer: Diodes Inc

Specifications of DMP2160U-7

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.2A
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Input Capacitance (ciss) @ Vds: 627pF @ 10V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: DMP2160UDITR

DMP2160U
Document number: DS31586 Rev. 4 - 2
Fig. 5 Gate Threshold Variation vs. Ambient Temperature
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1.6
1.4
1.2
1.0
0.8
0.6
1
-50
-50 -25
Fig. 3 On-Resistance Variation with Temperature
-25
0.001
0.01
T , AMBIENT TEMPERATURE (°C)
0.1
T , JUNCTION TEMPERATURE (°C)
0.00001
A
1
J
D = 0.01
D = 0.02
D = 0.005
D = Single Pulse
D = 0.3
D = 0.5
D = 0.7
D = 0.1
D = 0.05
0
0
25
0.0001
25
50
50
I = 250µA
D
V
GS
I = -2A
0.001
75
D
75
= -2.5V
I = 1mA
D
100
100
V
I = -4.5A
GS
D
= -4.5V
125 150
0.01
Fig. 7 Transient Thermal Response
125 150
t , PULSE DURATION TIME (s)
1
D = 0.9
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0.1
3 of 5
1
1,200
1,000
800
600
400
200
10
8
6
4
2
0
0
0
0
C
10
0.2
Fig. 6 Diode Forward Voltage vs. Current
rss
P(pk)
-V , SOURCE-DRAIN VOLTAGE (V)
V , DRAIN-SOURCE VOLTAGE (V)
C
T - T = P * R
Duty Cycle, D = t /t
SD
DS
R
C
oss
J
4
0.4
θJA
R
iss
θ
JA
t
(t) = r(t) *
A
Fig. 4 Typical Capacitance
1
t
= 338°C/W
100
2
0.6
θ
R
8
JA
T = 25°C
θ
1 2
A
JA
(t)
0.8
1,000
12
1
10,000
1.2
V
f = 1MHz
GS
DMP2160U
16
= 0V
1.4 1.6
© Diodes Incorporated
November 2009
20