FDN338P Fairchild Semiconductor, FDN338P Datasheet
FDN338P
Manufacturer Part Number
FDN338P
Description
MOSFET P-CH 20V 1.6A SSOT3
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDN338P.pdf
(5 pages)
Specifications of FDN338P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
115 mOhm @ 1.6A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.6A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
6.2nC @ 4.5V
Input Capacitance (ciss) @ Vds
451pF @ 10V
Power - Max
460mW
Mounting Type
Surface Mount
Package / Case
3-SSOT, SuperSOT-3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.115 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
6 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
1.6 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDN338PTR
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FAIRCHILD/仙童
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FAIRC
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3 000
FDN338P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
D
J
DSS
GSS
, T
JA
J C
Device Marking
Battery management
Load switch
Battery protection
STG
P-Channel
SuperSOT -3
.338
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
2.5V
D
TM
specified
G
– Continuous
– Pulsed
FDN338P
Device
Parameter
MOSFET
S
T
A
=25
uses
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
Features
–1.6 A, –20 V. R
Fast switching speed
High performance trench technology for extremely
low R
SuperSOT
power handling capability than SOT23 in the same
footprint
DS(ON)
T M
-3 provides low R
Tape width
G
–55 to +150
R
Ratings
8mm
DS(ON)
DS(ON)
–1.6
0.46
–20
250
0.5
–5
75
D
8
= 115 m @ V
= 155 m @ V
S
September 2001
DS(ON)
and 30% higher
3000 units
GS
GS
FDN338P Rev F(W)
Quantity
= –4.5 V
= –2.5 V
Units
C/W
C/W
W
V
V
A
C
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FDN338P Summary of contents
Page 1
... Reel Size 7’’ September 2001 = 115 –4.5 V DS(ON 155 –2.5 V DS(ON provides low R and 30% higher DS(ON Ratings Units – –1.6 A –5 0.5 W 0.46 –55 to +150 C 250 C/W 75 C/W Tape width Quantity 8mm 3000 units FDN338P Rev F(W) ...
Page 2
... CA b) 270°C/W when mounted on a minimum pad. Min Typ Max Units –20 V –16 mV/ C –1 A 100 nA –100 nA –0.4 –0.8 –1.5 V 2.7 mV 115 m 117 155 116 165 – 451 6 4.4 6.2 nC 1.1 nC 0.7 nC –0.42 A –0.7 –1.2 V FDN338P Rev F(W) ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature -2.0V GS -2.5V -3.0V -3.5V -4. DRAIN CURRENT ( -0 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDN338P Rev F( 1.2 ...
Page 4
... Figure 8. Capacitance Characteristics. 20 1ms 10ms 100 0.001 0.01 Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz ISS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 270°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( 270 °C/W JA P(pk ( Duty Cycle 100 FDN338P Rev F( 1000 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...