NDS331N Fairchild Semiconductor, NDS331N Datasheet

MOSFET N-CH 20V 1.3A SSOT3

NDS331N

Manufacturer Part Number
NDS331N
Description
MOSFET N-CH 20V 1.3A SSOT3
Manufacturer
Fairchild Semiconductor
Type
Power MOSFETr
Datasheet

Specifications of NDS331N

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
160 mOhm @ 1.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.3A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
5nC @ 4.5V
Input Capacitance (ciss) @ Vds
162pF @ 10V
Power - Max
460mW
Mounting Type
Surface Mount
Package / Case
3-SSOT, SuperSOT-3
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.16Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
8V
Drain Current (max)
1.3A
Power Dissipation
500mW
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SuperSOT
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.16 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
1.3 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDS331NTR

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Absolute Maximum Ratings
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
© 1997 Fairchild Semiconductor Corporation
D
_______________________________________________________________________________
J
DSS
GSS
D
These N-Channel logic level enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications in notebook computers, portable phones, PCMCIA
cards, and other
switching, and low in-line power loss are needed in a very
small outline surface mount package.
,T
General Description
NDS331N
JA
JC
N-Channel Logic Level Enhancement Mode Field Effect Transistor
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage - Continuous
Maximum Drain Current - Continuous
Maximum Power Dissipation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
battery powered circuits where
- Pulsed
T
A
= 25°C unless otherwise noted
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1a)
(Note 1)
fast
Features
1.3 A, 20 V. R
Industry standard outline SOT-23 surface mount package
using poprietary SuperSOT
and electrical capabilities.
High density cell design for extremely low R
Exceptional on-resistance and maximum DC current
capability.
G
R
DS(ON)
DS(ON)
NDS331N
-55 to 150
0.46
250
1.3
0.5
= 0.21
= 0.16
20
10
75
8
D
TM
@ V
-3 design for superior thermal
S
@ V
GS
GS
= 2.7 V
= 4.5 V.
DS(ON)
July 1996
.
NDS331N Rev.E
Units
°C/W
°C/W
°C
W
V
V
A

Related parts for NDS331N

NDS331N Summary of contents

Page 1

... Exceptional on-resistance and maximum DC current capability 25°C unless otherwise noted A (Note 1a) - Pulsed (Note 1a) (Note 1b) (Note 1a) (Note 1) July 1996 = 0. 2.7 V DS(ON 0. 4.5 V. DS(ON design for superior thermal . DS(ON NDS331N 20 8 1.3 10 0.5 0.46 -55 to 150 250 75 NDS331N Rev.E Units °C °C/W °C/W ...

Page 2

... Conditions 250 µ 250 µ 1.0 MHz Gen 1 4 Min Typ Max =125° 100 -100 0.5 0 =125°C 0.3 0.53 0.8 J 0.15 0.21 T =125°C 0.24 0.4 J 0.11 0. 3.5 162 3.5 5 0.3 1 NDS331N Rev.E Units V µA µ ...

Page 3

... C/W when mounted on a 0.02 in pad of 2oz copper 270 C/W when mounted on a 0.001 in pad of 2oz copper Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. Conditions 0.42 A (Note Min Typ Max Units 0. 0.8 1 guaranteed by JC NDS331N Rev.E ...

Page 4

... Figure 6. Gate Threshold Variation . 2.5 2.7 3.0 3.5 4.5 0.5 1 1 DRAIN CURRENT ( 125°C J 25°C -55°C 0.5 1 1 DRAIN CURRENT ( µ JUNCTION TEMPERATURE (° with Temperature NDS331N Rev.E ...

Page 5

... Figure 10. Gate Charge Characteristics t d(on OUT V OUT DUT Figure 12. Switching Waveforms = 125°C J 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Source Current and Temperature 15V GATE CHARGE (nC off t t d(off PULSE WIDTH . 1.2 . 10V INVERTED NDS331N Rev.E ...

Page 6

... Current versus Copper Mounting Pad. Area 0.01 0 TIME (sec 2. 0 DRAIN-SOURCE VOLTAGE (V) DS 4.5"x5" FR-4 Board Still Air V = 2.7V GS 0.1 0.2 0.3 2 2oz COPPER MOUNTING PAD AREA ( ( See Note 1b JA P(pk ( Duty Cycle 100 20 30 0.4 300 Transient thermal NDS331N Rev.E ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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