NDS332P Fairchild Semiconductor, NDS332P Datasheet

MOSFET P-CH 20V 1A SSOT3

NDS332P

Manufacturer Part Number
NDS332P
Description
MOSFET P-CH 20V 1A SSOT3
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of NDS332P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
300 mOhm @ 1.1A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
5nC @ 4.5V
Input Capacitance (ciss) @ Vds
195pF @ 10V
Power - Max
460mW
Mounting Type
Surface Mount
Package / Case
3-SSOT, SuperSOT-3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.3 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
1 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
1A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
410mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-600mV
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDS332PTR

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Asolute Maximum Ratings
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
________________________________________________________________________________
© 1997 Fairchild Semiconductor Corporation
D
NDS332P
P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
DSS
GSS
D
J
These P-Channel logic level enhancement mode power field
effect transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance. These
devices are particularly suited for low voltage applications such as
notebook computer power management, portable electronics,
and other battery powered circuits where fast
switching, and low in-line power loss are needed in a very small
outline surface mount package.
,T
JA
JC
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage - Continuous
Drain Current - Continuous
Maximum Power Dissipation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
- Pulsed
T
A
= 25°C unless otherwise noted
(Note 1b)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1a)
high-side
Features
-1 A, -20 V, R
Very low level gate drive requirements allowing direct
operation in 3V circuits. V
Proprietary package design using copper lead frame for
superior thermal and electrical capabilities.
High density cell design for extremely low R
Exceptional on-resistance and maximum DC current
capability.
Compact industry standard SOT-23 surface Mount
package.
R
NDS332P
-55 to 150
DS(ON)
DS(ON)
G
0.46
250
-20
-10
0.5
±8
75
-1
= 0.3
= 0.41
GS(th)
D
@ V
@ V
< 1.0V.
GS
GS
= -4.5 V.
S
= -2.7 V
DS(ON)
June 1997
NDS332P Rev. E
.
Units
°C/W
°C/W
°C
W
V
V
A

Related parts for NDS332P

NDS332P Summary of contents

Page 1

... Compact industry standard SOT-23 surface Mount package 25°C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1a) (Note 1) June 1997 = 0. -2.7 V DS(ON 0 -4.5 V. DS(ON) GS < 1.0V. GS(th) . DS(ON NDS332P Units -20 V ± -10 0.5 W 0.46 -55 to 150 °C 250 °C/W 75 °C/W NDS332P Rev. E ...

Page 2

... - 55° -250 µ =125° -2 =125° - 1.0 MHz -4 GEN -4 Min Typ Max Units - µA -10 µA 100 nA -100 nA -0.4 -0 -0.3 -0.45 -0.8 0.35 0.41 0.5 0.74 0.26 0.3 -1.5 A -2.5 2.2 S 195 pF 105 3 0.5 nC 0.9 nC NDS332P Rev. E ...

Page 3

... C/W when mounted on a 0.02 in pad of 2oz copper 270 C/W when mounted on a 0.001 in pad of 2oz copper Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. Conditions -0.42 A (Note Min Typ Max Units -0.42 A -0.75 -1 guaranteed by JC NDS332P Rev. E ...

Page 4

... Figure 6. Gate Threshold Variation -2.5 -2.7 -3.0 -3.5 -4.5 -1 -1 DRAIN CURRENT ( 125°C J 25°C -55°C -1 -1 DRAIN CURRENT ( -250µ 100 125 150 T , JUNCTION TEMPERATURE (°C) J with Temperature. NDS332P Rev.E ...

Page 5

... C iss 3 C oss 2 C rss Figure 10. Gate Charge Characteristics t t d(on OUT V OUT DUT Figure 12. Switching Waveforms = 125°C J 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE ( - -1A -15V GATE CHARGE (nC off d(off INVERTED PULSE WIDTH . 1 -10V 5 f NDS332PRev. E ...

Page 6

... Figure 16. Maximum Steady-State Drain Current versus Copper Mounting Pad Area 0.01 0 TIME (sec -2. See Note 25° DRAIN-SOURCE VOLTAGE ( 4.5"x5" FR-4 Board Still Air V = -2.7V GS 0.1 0.2 0.3 2 2oz COPPER MOUNTING PAD AREA ( ( See Note 1b JA P(pk ( Duty Cycle 100 50 . 0.4 . 300 NDS332PRev. E ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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