DMN32D2LFB4-7 Diodes Inc, DMN32D2LFB4-7 Datasheet

MOSFET N-CH 30V 300MA 3-DFN

DMN32D2LFB4-7

Manufacturer Part Number
DMN32D2LFB4-7
Description
MOSFET N-CH 30V 300MA 3-DFN
Manufacturer
Diodes Inc
Datasheet

Specifications of DMN32D2LFB4-7

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.2 Ohm @ 100mA, 4V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
300mA
Vgs(th) (max) @ Id
1.2V @ 250µA
Input Capacitance (ciss) @ Vds
39pF @ 3V
Power - Max
350mW
Mounting Type
Surface Mount
Package / Case
3-DFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Other names
DMN32D2LFB4DITR

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Part Number
Manufacturer
Quantity
Price
Part Number:
DMN32D2LFB4-7
Manufacturer:
Diodes Inc
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24 890
Part Number:
DMN32D2LFB4-7
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Quantity:
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Part Number:
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Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Features
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Total Power Dissipation (Note 1) @T
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Time
Notes:
DMN32D2LFB4
Document number: DS31124 Rev. 5 - 2
N-Channel MOSFET
Low On-Resistance
Very Low Gate Threshold Voltage, 1.2V max
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
ESD Protected Gate
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
1. Device mounted on FR-4 PCB, pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Short duration pulse test used to minimize self-heating effect.
http://www.diodes.com/datasheets/ap02001.pdf.
ESD PROTECTED
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
A
= 25°C
@T
@T
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
BOTTOM VIEW
Turn-on Time
Turn-off Time
@ T
C
= 25°C
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
www.diodes.com
DFN1006H4-3
Symbol
R
BV
V
DS (ON)
I
I
C
1 of 5
|Y
V
C
C
GS(th)
DSS
GSS
t
t
oss
SD
rss
DSS
iss
on
off
fs
|
Mechanical Data
T
Symbol
Gate
J
V
V
R
Equivalent Circuit
, T
Please click here to visit our online spice models database.
P
DSS
GSS
I
θ JA
Gate
Protection
Diode
D
Case: DFN1006H4-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.001 grams (approximate)
D
Min
100
0.6
0.5
STG
30
Drain
Source
Typ
3.6
39
10
11
51
Body
Diode
-55 to +150
±500
Max
±10
1.2
2.2
1.5
1.2
1.4
1
Value
±10
300
350
357
30
D
TOP VIEW
Unit
mS
μA
μA
nA
pF
pF
pF
nS
nS
V
V
Ω
V
DMN32D2LFB4
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
GS
DS
GS
GS
DS
GS
GS
GS
DS
GS
DS
DD
GS
G
S
= 0V, I
= 30V, V
= ±10V, V
= ±5V, V
= V
= 1.8V, I
= 2.5V, I
= 4.0V, I
=10V, I
= 0V, I
= 3V, V
= 5V, I
= 0-5V
Test Condition
GS
© Diodes Incorporated
, I
°C/W
Unit
D
mW
S
D
mA
D
°C
GS
D
V
V
= 10μA
= 115mA
= 10 mA,
GS
D
D
D
DS
= 0.1A
= 250μA
DS
= 20mA
= 20mA
= 100mA
= 0V
June 2009
= 0V
= 0V
= 0V

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DMN32D2LFB4-7 Summary of contents

Page 1

... V SD ⎯ C iss ⎯ C oss ⎯ C rss ⎯ Turn-on Time t on ⎯ Turn-off Time t off www.diodes.com DMN32D2LFB4 Drain Body Diode Source TOP VIEW Value Unit 30 ±10 300 350 mW °C/W 357 -55 to +150 Typ Max Unit Test Condition ⎯ ⎯ ...

Page 2

... DMN32D2LFB4 Document number: DS31124 Rev www.diodes.com DMN32D2LFB4 June 2009 © Diodes Incorporated ...

Page 3

... D 1.2 1 0.8 0.6 -75 -50 - AMBIENT TEMPERATURE (C°) A Fig. 7 Normalized Static Drain-Source On-Resistance vs. Ambient Temperature Ordering Information (Note 5) Part Number DMN32D2LFB4-7 Notes: 5. For packaging details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information DMN32D2LFB4 Document number: DS31124 Rev 2. 20mA 1. 20mA D 75 100 125 150 ...

Page 4

... DMN32D2LFB4 Document number: DS31124 Rev Dim All Dimensions Dimensions www.diodes.com DMN32D2LFB4 DFN1006H4-3 Min Max Typ ⎯ ⎯ 0.40 0 0.05 0.02 0.10 0.20 0.15 0.45 0.55 0.50 0.95 1.075 1.00 0.55 0.675 0.60 ⎯ ⎯ 0.35 0.20 0.30 0.25 0.20 0.30 0.25 ⎯ ...

Page 5

... Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2009, Diodes Incorporated www.diodes.com DMN32D2LFB4 Document number: DS31124 Rev IMPORTANT NOTICE LIFE SUPPORT www.diodes.com DMN32D2LFB4 June 2009 © Diodes Incorporated ...

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