DMN32D2LFB4-7 Diodes Inc, DMN32D2LFB4-7 Datasheet - Page 3

• Manufacturer Part Number: DMN32D2LFB4-7
• Description: MOSFET N-CH 30V 300MA 3-DFN
• Manufacturer: Diodes Inc

Specifications of DMN32D2LFB4-7

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 100mA, 4V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Input Capacitance (ciss) @ Vds: 39pF @ 3V
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: 3-DFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: DMN32D2LFB4DITR

Ordering Information
Marking Information
Notes:
DMN32D2LFB4
Document number: DS31124 Rev. 5 - 2
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
1.8
1.6
1.4
1.2
0.8
0.6
1
-75
Fig. 7 Normalized Static Drain-Source On-Resistance
DMN32D2LFB4-7
Part Number
-50 -25
T , AMBIENT TEMPERATURE (C°)
A
vs. Ambient Temperature
0
(Note 5)
25
V
I = 100mA
D
GS
50
= 4V
75
V
I = 20mA
D
GS
100 125 150
DV
= 1.8V
V
I = 20mA
D
GS
= 2.5V
www.diodes.com
DFN1006H4-3
DV = Product Type Marking Code
Case
3 of 5
50
40
30
20
10
0
0
V , DRAIN-SOURCE VOLTAGE (V)
DS
5
Fig. 10 Typical Capacitance
10
3000/Tape & Reel
Packaging
DMN32D2LFB4
15
f = 1 MHz
C
© Diodes Incorporated
C
C
iss
oss
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June 2009
20