FDMC8884 Fairchild Semiconductor, FDMC8884 Datasheet

MOSFET N-CH 30V 9A POWER33

FDMC8884

Manufacturer Part Number
FDMC8884
Description
MOSFET N-CH 30V 9A POWER33
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMC8884

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
19 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
685pF @ 15V
Power - Max
2.3W
Mounting Type
Surface Mount
Package / Case
8-MLP, Power33
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.019 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9 A
Power Dissipation
2300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMC8884TR

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©2010 Fairchild Semiconductor Corporation
FDMC8884 Rev.E2
FDMC8884
N-Channel Power Trench
30 V, 15 A, 19 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
DS
GS
AS
D
J
θJC
θJA
Max r
Max r
High performance technology for extremely low r
Termination is Lead-free and RoHS Compliant
, T
Symbol
Device Marking
STG
FDMC8884
DS(on)
DS(on)
= 19 mΩ at V
= 30 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Top
GS
GS
= 10 V, I
= 4.5 V, I
MLP 3.3x3.3
FDMC8884
-Continuous
-Continuous (Silicon limited)
-Pulsed
Device
D
D
= 9.0 A
= 7.2 A
Pin 1
T
A
®
= 25 °C unless otherwise noted
DS(on)
S
Parameter
MOSFET
S
S
MLP 3.3x3.3
G
Package
Bottom
1
T
T
T
T
T
General Description
This
Semiconductor’s advanced Power Trench
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Application
D
A
C
C
A
C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
High side in DC - DC Buck Converters
Notebook battery power management
Load switch in Notebook
D
= 25 °C
D
N-Channel
D
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 3)
D
D
D
D
MOSFET
8
5
6
7
Tape Width
12 mm
is produced using Fairchild
-55 to +150
Ratings
±20
6.6
9.0
2.3
53
30
15
24
40
24
18
®
process that has
October 2010
www.fairchildsemi.com
3000 units
Quantity
1
4
3
2
G
S
S
Units
S
°C/W
mJ
°C
W
V
V
A

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FDMC8884 Summary of contents

Page 1

... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMC8884 FDMC8884 ©2010 Fairchild Semiconductor Corporation FDMC8884 Rev.E2 ® MOSFET General Description = 9.0 A This N-Channel D Semiconductor’s advanced Power Trench = 7 been especially tailored to minimize the on-state resistance. This ...

Page 2

... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %. ° based on starting mH ©2010 Fairchild Semiconductor Corporation FDMC8884 Rev. °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 °C I ...

Page 3

... JUNCTION TEMPERATURE ( , T J Figure 3. Normalized On- Resistance vs Junction Temperature 40 μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDMC8884 Rev. °C unless otherwise noted J 4.0 μ s 3.5 3 2 1 ...

Page 4

... THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE 0 MAX RATED 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDMC8884 Rev. °C unless otherwise noted J 1000 100 Figure 10. 1000 100 us 100 100 ms ...

Page 5

... Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE R = 125 θ JA 0.001 - ©2010 Fairchild Semiconductor Corporation FDMC8884 Rev. °C unless otherwise noted RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve NOTES: DUTY FACTOR ...

Page 6

... Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDMC8884 Rev.E2 6 www.fairchildsemi.com ...

Page 7

... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDMC8884 Rev.E2 F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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