FDC638APZ Fairchild Semiconductor, FDC638APZ Datasheet
FDC638APZ
Specifications of FDC638APZ
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FDC638APZ Summary of contents
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... Thermal Resistance, Junction to Ambient θJA R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking .638Z ©2006 Fairchild Semiconductor Corporation FDC638APZ Rev.B ® Specified MOSFET General Description = –4.5A This P-Channel 2.5V specified MOSFET is produced using D Fairchild Semiconductor’s advanced PowerTrench = –3.8A ...
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... R is determined by user’s board design. θCA a. 78°C/W when mounted FR-4 board. 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. FDC638APZ Rev 25°C unless otherwise noted J Test Conditions I = –250µ ...
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... T , JUNCTION TEMPERATURE J Figure 3. Normalized On- Resistance vs Junction Temperature 20 PULSE DURATION = 80 µ s DUTY CYCLE = 0.5%MAX 150 - 1.0 1.5 2 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDC638APZ Rev 25°C unless otherwise noted -2.5V = -3. -2.0V GS PULSE DURATION = 80 µ s DUTY CYCLE = 0.5%MAX 100 125 150 - 0.001 ...
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... Gate Charge Characteristics 0 150 C J 1E-3 1E-4 1E GATE TO SOURCE VOLTAGE(V) GS Figure 9. Gate Leakage Current vs Gate to Source Voltage SINGLE PULSE PULSE WIDTH (s) Figure 11. Single Pulse Maximum Power Di FDC638APZ Rev 25°C unless otherwise noted -10V -15V SINGLE PULSE 156 C/W θ = 0.001 ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FDC638APZ Rev. B OCX™ SILENT SWITCHER OCXPro™ SMART START™ ® OPTOLOGIC SPM™ OPTOPLANAR™ ...