FDN358P Fairchild Semiconductor, FDN358P Datasheet

FDN358P

Manufacturer Part Number

FDN358P

Description

MOSFET P-CH 30V 1.5A SSOT3

Manufacturer

Fairchild Semiconductor

Series

PowerTrench®r

Type

Power MOSFETr

Datasheet

1.FDN358P.pdf (5 pages)

Specifications of FDN358P

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

125 mOhm @ 1.5A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

1.5A

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

5.6nC @ 10V

Input Capacitance (ciss) @ Vds

182pF @ 15V

Power - Max

460mW

Mounting Type

Surface Mount

Package / Case

3-SSOT, SuperSOT-3

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.125 Ohm @ 10 V

Forward Transconductance Gfs (max / Min)

3.5 S

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

1.5 A

Power Dissipation

500 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.125Ohm

Drain-source On-volt

30V

Gate-source Voltage (max)

±20V

Drain Current (max)

1.5A

Output Power (max)

Not RequiredW

Frequency (max)

Not RequiredMHz

Noise Figure

Not RequireddB

Power Gain

Not RequireddB

Drain Efficiency

Not Required%

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Package Type

SuperSOT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

FDN358PTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FDN358P

Manufacturer:

Fairchild Semiconductor

Quantity:

71 863

Company:

BOSTOCK HK LIMITED

Part Number:

FDN358P

Manufacturer:

FAIRCHILD

Quantity:

10 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

FDN358P

Manufacturer:

FAIRCHILD/仙童

Quantity:

20 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

FDN358P

Company:

H&T Electronics

Part Number:

FDN358P

Quantity:

63 412

Company:

Meier Automation Equipment Co., Limited

Part Number:

FDN358P-NL

Manufacturer:

ON/安森美

Quantity:

20 000

Current page: 1 of 5
Download datasheet (114Kb)

FDN358P

Single P-Channel, Logic Level, PowerTrench MOSFET

General Description

This P-Channel Logic Level MOSFET is produced

using Fairchild Semiconductor advanced Power Trench

process that has been especially tailored to minimize

the on-state resistance and yet maintain low gate

charge for superior switching performance.

These devices are well suited for portable electronics

applications: load switching and power management,

battery charging circuits, and DC/DC conversion.

2003 Fairchild Semiconductor Corporation

Absolute Maximum Ratings

Symbol

Thermal Characteristics

Package Marking and Ordering Information

DSS

GSS

, T

Device Marking

STG

SuperSOT -3

358

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Power Dissipation for Single Operation

Operating and Storage Junction Temperature Range

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

– Continuous

– Pulsed

FDN358P

Device

Parameter

=25

C unless otherwise noted

Reel Size

7’’

(Note 1a)

(Note 1b)

(Note 1a)

(Note 1)

Features

–1.5 A, –30 V. R

Low gate charge (4 nC typical)

High performance trench technology for extremely

High power version of industry Standard SOT-23

low R

package. Identical pin-out to SOT-23 with 30%

higher power handling capability.

DS(ON)

Tape width

DS(ON)

–55 to +150

8mm

Ratings

–1.5

0.46

–30

250

0.5

–5

= 125 m @ V

= 200 m @ V

January 2003

FDN358P Rev G (W)

3000 units

= –10 V

= –4.5 V

Quantity

Units

C/W

Related parts for FDN358P

FDN358P Summary of contents

Page 1

... C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1a) (Note 1) Reel Size Tape width 7’’ January 2003 = 125 –10 V DS(ON 200 –4.5 V DS(ON Ratings Units – –1.5 A –5 0.5 W 0.46 –55 to +150 C C/W 250 C/W 75 Quantity 8mm 3000 units FDN358P Rev G (W) ...

Page 2

... Min Typ Max Units –30 V –22 mV/ C –1 –10 100 nA –100 nA –1 –1.9 – mV/ C 105 125 m 148 210 =125 C J 161 200 –5 A 3.5 S 182 5.6 nC 0.8 nC 0.8 nC –0.42 A –0.76 –1.2 V (Note 2) FDN358P Rev G (W) A ...

Page 3

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. V =-4.0V GS -4.5V -5.0V -6.0V -7.0V -10V DRAIN CURRENT ( -0.75A 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0.8 1 BODY DIODE FORWARD VOLTAGE (V) SD FDN358P Rev G ( 1.2 ...

Page 4

... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 270°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( 270 °C/W JA P(pk ( Duty Cycle 100 FDN358P Rev G (W) 30 1000 2 1000 ...

Page 5

CROSSVOLT â â â â â Rev. I2 ...

Related keywords

fdn359
fdn359bn
fdn359an
fdn358p
fdn358
fdn357n
fdn357
fdn352ap
fdn352
FDN358P datasheet
FDN358P data sheet
FDN358P pdf datasheet
FDN358P component
FDN358P part
FDN358P distributor
FDN358P RoHS
FDN358P datasheet download