FDN358P Fairchild Semiconductor, FDN358P Datasheet - Page 4

MOSFET P-CH 30V 1.5A SSOT3

FDN358P

Manufacturer Part Number
FDN358P
Description
MOSFET P-CH 30V 1.5A SSOT3
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Type
Power MOSFETr
Datasheet

Specifications of FDN358P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
125 mOhm @ 1.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
1.5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
5.6nC @ 10V
Input Capacitance (ciss) @ Vds
182pF @ 15V
Power - Max
460mW
Mounting Type
Surface Mount
Package / Case
3-SSOT, SuperSOT-3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.125 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
3.5 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.5 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.125Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Drain Current (max)
1.5A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SuperSOT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDN358PTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDN358P
Manufacturer:
Fairchild Semiconductor
Quantity:
71 863
Part Number:
FDN358P
Manufacturer:
FAIRCHILD
Quantity:
10 000
Part Number:
FDN358P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDN358P
0
Company:
Part Number:
FDN358P
Quantity:
63 412
Part Number:
FDN358P-NL
Manufacturer:
ON/安森美
Quantity:
20 000
Stress
PCNL1A
Environment Stress Detail:
Stress
ACLV
PRCL
TMCL1
Device #3 FDC637BNZ
Package:
#Leads:
Precondition Description:
Stress
PCNL1A
Environment Stress Detail:
Stress
ACLV
HAST2
HTGB
HTRB
PRCL
TMCL1
Device #4 FDC638APZ
Package:
#Leads:
Precondition Description:
Stress
PCNL1A
Environment Stress Detail:
Stress
ACLV
HAST2
HTGB
HTRB
PRCL
TMCL1
Device #5 FDC658AP
Package:
#Leads:
P/C
X
X
P/C
P/C
X
X
X
P/C
P/C
X
X
X
TTK23
006
TTK23
006
TTK23
006
P/C
Standard
JESD22-A113
Standard
JESD22-A113
Standard
JESD22-A102 100%RH, 121C 96
MIL-
STD-750-1036
JESD22-A104 -65C, 150C
Standard
JESD22-A102 100%RH, 121C 96
JESD22-A110 85%RH, 110C,
JESD22-A108 150C, 12V
JESD22-A108 150C, 16V
MIL-
STD-750-1036
JESD22-A104 -65C, 150C
Standard
JESD22-A102 100%RH, 121C 96
JESD22-A110 85%RH, 110C,
JESD22-A108 150C, 8V
JESD22-A108 150C, 16V
MIL-
STD-750-1036
JESD22-A104 -65C, 150C
Standard
JESD22-A113
Conditions
Delta 100CC, 2
Min cycle
Conditions
16V
Delta 100?C, 2
Min cycle
Conditions
16V
Delta 100?C, 2
Min cycle
Conditions
Conditions
Conditions
Readpoints
TP1
5000
100
Readpoints
TP1
132
168
168
5000
100
Readpoints
TP1
132
168
168
5000
100
TP2
264
500
500
10000
500
TP2
264
500
500
10000
500
Read-
points
Read-
points
TP2
10000
500
TP3
1000
1000
TP3
1000
1000
Sample
Sample
A
A
0
0
Samples
A
77
77
77
Samples
A
77
77
77
77
77
77
Samples
A
77
77
77
77
77
77
B
B
0
0
B
77
77
77
77
77
77
B
77
77
77
77
77
77
A
0
C
C
0
0
C
77
77
77
77
77
77
C
77
77
77
77
77
77
Pg. 4

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