ZVN3320FTA Diodes Zetex, ZVN3320FTA Datasheet

MOSFET N-CH 200V 60MA SOT23-3

ZVN3320FTA

Manufacturer Part Number
ZVN3320FTA
Description
MOSFET N-CH 200V 60MA SOT23-3
Manufacturer
Diodes Zetex
Type
Small Signalr
Datasheet

Specifications of ZVN3320FTA

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
25 Ohm @ 100mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
60mA
Vgs(th) (max) @ Id
3V @ 1mA
Input Capacitance (ciss) @ Vds
45pF @ 25V
Power - Max
330mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
25Ohm
Drain-source On-volt
200V
Gate-source Voltage (max)
±20V
Continuous Drain Current
60mA
Power Dissipation
330mW
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Compliant
Other names
UZVN3320FTA
ZVN3320FTR

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SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – DECEMBER 1995
FEATURES
*
*
PARTMARKING DETAIL – MU
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% (2) Sample test.
(3) Switching times measured with 50
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage
Drain Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance(1)
(2)
Input Capacitance (2)
Common Source
Output Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
200 Volt V
R
DS(on)
= 25
DS
amb
=25°C
amb
SYMBOL MIN.
BV
V
I
R
g
C
C
t
t
t
I
I
C
t
GSS
DSS
D(on)
d(on)
r
d(off)
f
fs
=25°C
GS(th)
DS(on)
iss
oss
rss
DSS
source impedance and <5ns rise time on a pulse generator
200
1.0
250
75
3 - 398
amb
SYMBOL
V
I
I
V
P
T
D
DM
tot
j
DS
GS
= 25°C unless otherwise stated).
:T
MAX. UNIT CONDITIONS.
3.0
100
10
50
25
45
18
5
5
7
6
6
stg
V
V
nA
mA
mS
pF
ns
ns
ns
ns
pF
pF
A
A
I
I
V
V
V
T=125°C
V
V
V
V
V
D
D
GS
DS
DS
DS
GS
DS
DS
DD
=1mA, V
=1mA, V
-55 to +150
=200V, V
=160V, V
=25V, V
=25V,I
=25V, V
= 20V, V
=10V,I
VALUE
25V, I
200
330
60
ZVN3320F
1
20
(2)
D
D
D
GS
DS
=100mA
=100mA
GS
GS
D
=0V
GS
GS
= V
=100mA
DS
=10V
=0V, f=1MHz
SOT23
=0V
=0V,
=0V
GS
UNIT
mW
mA
°C
V
A
V
G
S

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