FDN306P Fairchild Semiconductor, FDN306P Datasheet
FDN306P
Manufacturer Part Number
FDN306P
Description
MOSFET P-CH 12V 2.6A SSOT3
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDN306P.pdf
(5 pages)
Specifications of FDN306P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
40 mOhm @ 2.6A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
2.6A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 4.5V
Input Capacitance (ciss) @ Vds
1138pF @ 6V
Power - Max
460mW
Mounting Type
Surface Mount
Package / Case
3-SSOT, SuperSOT-3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.04 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
10 S
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.6 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDN306PTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDN306P
Manufacturer:
Fairchild Semiconductor
Quantity:
55 538
Company:
Part Number:
FDN306P
Manufacturer:
FAIRCHILD
Quantity:
2 400
Part Number:
FDN306P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDN306P-NL
Manufacturer:
FAI
Quantity:
20 000
FDN306P
P-Channel 1.8V Specified PowerTrench
General Description
This
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
• Battery management
• Load switch
• Battery protection
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
θJA
θJC
, T
Device Marking
STG
P-Channel
SuperSOT -3
306
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
1.8V
D
TM
specified
G
– Continuous
– Pulsed
FDN306P
Device
Parameter
MOSFET
S
T
A
uses
=25
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
Features
• –2.6 A, –12 V.
• Fast switching speed
• High performance trench technology for extremely
• SuperSOT
MOSFET
low R
power handling capability than SOT23 in the same
footprint
DS(ON)
TM
-3 provides low R
Tape width
G
–55 to +150
8mm
R
R
R
Ratings
DS(ON)
DS(ON)
DS(ON)
–
0.46
–
–12
250
0.5
±8
75
2.6
10
D
= 40 mΩ @ V
= 50 mΩ @ V
= 80 mΩ @ V
S
December 2001
DS(ON)
and 30% higher
GS
GS
GS
3000 units
FDN306P Rev D (W)
Quantity
= –4.5 V
= –2.5 V
= –1.8 V
Units
°C/W
°C/W
°C
W
V
V
A
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FDN306P Summary of contents
Page 1
... December 2001 mΩ –4.5 V DS(ON mΩ –2.5 V DS(ON mΩ –1.8 V DS(ON provides low R and 30% higher DS(ON Ratings Units – ±8 – A 2.6 – 10 0.5 W 0.46 –55 to +150 °C 250 °C/W 75 °C/W Tape width Quantity 8mm 3000 units FDN306P Rev D (W) ...
Page 2
... S is determined by the user's board design. θCA b) 270°C/W when mounted on a minimum pad. Min Typ Max Units –12 V –3 mV/°C –1 µA 100 nA –100 nA –0.4 –0.6 –1.5 V 2.5 mV/° mΩ – 1138 pF 454 pF 302 –0.42 A –0.6 –1.2 V FDN306P Rev D W) ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. -2.0V -2.5V -3.0V -3.5V -4. DIRAIN CURRENT ( -1. 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.4 0.6 0.8 1 1.2 , BODY DIODE FORWARD VOLTAGE (V) SD FDN306P Rev D W) ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 270°C/W θ 25°C A 0.01 0 TIME (sec) 1 Power Dissipation. R ( θJA θ 270 C/W θJA P(pk ( θJA Duty Cycle 100 1000 FDN306P Rev 100 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...