SI2302CDS-T1-GE3 Vishay, SI2302CDS-T1-GE3 Datasheet

MOSFET N-CH 20V 2.6A SOT23-3

SI2302CDS-T1-GE3

Manufacturer Part Number
SI2302CDS-T1-GE3
Description
MOSFET N-CH 20V 2.6A SOT23-3
Manufacturer
Vishay
Datasheet

Specifications of SI2302CDS-T1-GE3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
57 mOhm @ 3.6A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.6A
Vgs(th) (max) @ Id
850mV @ 250µA
Gate Charge (qg) @ Vgs
5.5nC @ 4.5V
Power - Max
710mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.057 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.6 A
Power Dissipation
710 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
2.9A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
75mohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
850mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI2302CDS-T1-GE3TR

Available stocks

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Part Number:
SI2302CDS-T1-GE3
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VISHAY
Quantity:
300
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 68645
S-81007-Rev. A, 05-May-08
PRODUCT SUMMARY
V
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot
DS
20
(V)
0.057 at V
0.075 at V
a
R
DS(on)
b
GS
GS
(Ω)
= 4.5 V
= 2.5 V
J
= 150 °C)
a
Ordering Information: Si2302CDS-T1-E3 (Lead (Pb)-free)
N-Channel 20-V (D-S) MOSFET
a
I
D
2.9
2.6
(A)
a
G
S
A
Q
= 25 °C, unless otherwise noted
g
Steady State
Steady State
1
2
Si2302CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
3.5
T
T
T
T
(Typ.)
Si2302CDS (N2)*
* Marking Code
A
A
A
A
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
(SOT-23)
Top View
TO-236
FEATURES
APPLICATIONS
3
• Halogen-free Option Available
• TrenchFET
• Load Switching for Portable Devices
• DC/DC Converter
Symbol
Symbol
T
R
R
J
V
V
D
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
stg
®
Power MOSFET
Typical
0.72
0.86
0.55
120
140
5 s
2.9
2.3
62
- 55 to 150
± 8
20
10
Steady State
Maximum
0.71
0.46
145
175
2.6
2.1
0.6
78
Vishay Siliconix
Si2302CDS
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SI2302CDS-T1-GE3 Summary of contents

Page 1

... Halogen-free Option Available I (A) Q (Typ • TrenchFET 2.9 3.5 APPLICATIONS 2.6 • Load Switching for Portable Devices • DC/DC Converter TO-236 (SOT-23 Top View Si2302CDS (N2)* * Marking Code Si2302CDS-T1-GE3 (Lead (Pb)-free and Halogen-free °C, unless otherwise noted A Symbol ° ° ° ...

Page 2

... Si2302CDS Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted A Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... T - Junction Temperature (°C) J On-Resistance vs. Junction Temperature Document Number: 68645 S-81007-Rev. A, 05-May-08 0.070 0.060 0.050 0.040 °C C 0.030 0.9 1 0.01 0.001 75 100 125 150 Si2302CDS Vishay Siliconix Drain Current (A) D On-Resistance vs. Drain Current 3 Total Gate Charge (nC) ...

Page 4

... Si2302CDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.12 0.10 0.08 0. ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.01 0.1 1 Time (s) Single Pulse Power 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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