SI2302CDS-T1-GE3 Vishay, SI2302CDS-T1-GE3 Datasheet - Page 2

MOSFET N-CH 20V 2.6A SOT23-3

SI2302CDS-T1-GE3

Manufacturer Part Number
SI2302CDS-T1-GE3
Description
MOSFET N-CH 20V 2.6A SOT23-3
Manufacturer
Vishay
Datasheet

Specifications of SI2302CDS-T1-GE3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
57 mOhm @ 3.6A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.6A
Vgs(th) (max) @ Id
850mV @ 250µA
Gate Charge (qg) @ Vgs
5.5nC @ 4.5V
Power - Max
710mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.057 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.6 A
Power Dissipation
710 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
2.9A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
75mohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
850mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI2302CDS-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI2302CDS-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
39 882
Part Number:
SI2302CDS-T1-GE3
Manufacturer:
ROHM
Quantity:
14 350
Part Number:
SI2302CDS-T1-GE3
Manufacturer:
VISHAY
Quantity:
300
Part Number:
SI2302CDS-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI2302CDS-T1-GE3
Manufacturer:
VISHAY
Quantity:
211
Part Number:
SI2302CDS-T1-GE3
0
Company:
Part Number:
SI2302CDS-T1-GE3
Quantity:
21 000
Company:
Part Number:
SI2302CDS-T1-GE3
Quantity:
30
Company:
Part Number:
SI2302CDS-T1-GE3
Quantity:
300
Company:
Part Number:
SI2302CDS-T1-GE3
Quantity:
300
Company:
Part Number:
SI2302CDS-T1-GE3
Quantity:
70 000
Si2302CDS
Vishay Siliconix
Notes:
a. Pulse test: Pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Body Diode Reverse Recovery Charge
b
10
8
6
4
2
0
0.0
V
a
0.5
DS
Output Characteristics
a
- Drain-to-Source Voltage (V)
a
A
V
= 25 °C, unless otherwise noted
GS
= 5 thru 2 V
1.0
Symbol
R
V
I
t
t
I
I
DS(on)
V
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
Q
Q
g
R
t
t
t
DS
SD
rr
fs
gs
gd
r
f
g
rr
g
1.5
V
V
GS
GS
= 1.5 V
V
= 1 V
I
V
D
DS
DS
≅ 3.6 A, V
I
F
= 10 V, V
2.0
= 20 V, V
V
V
V
V
V
V
V
V
I
= 3.6 A, dI/dt = 100 A/µs
DD
DS
DS
V
S
DS
GS
GS
GS
DS
DS
= 0.95 A, V
Test Conditions
= 10 V, R
= V
≥ 10 V, V
= 0 V, V
= 0 V, I
= 4.5 V, I
= 2.5 V, I
= 20 V, V
f = 1.0 MHz
= 5 V, I
GEN
GS
GS
GS
, I
= 4.5 V, I
= 0 V, T
= 4.5 V, R
D
D
GS
D
GS
L
= 250 µA
D
D
= 250 µA
GS
GS
= 3.6 A
= 2.78 Ω
= 3.6 A
= 3.1 A
= ± 8 V
= 4.5 V
= 0 V
= 0 V
J
D
= 70 °C
g
= 3.6 A
= 1 Ω
10
8
6
4
2
0
0.0
T
C
0.4
= 125 °C
Min.
0.40
V
2.0
20
6
GS
Transfer Characteristics
- Gate-to-Source Voltage (V)
T
C
= 25 °C
0.8
Limits
0.045
0.056
Typ.
0.45
0.7
3.5
0.6
4.0
8.5
2.0
13
30
8
7
7
S-81007-Rev. A, 05-May-08
Document Number: 68645
1.2
± 100
0.057
0.075
Max.
0.85
T
1.2
5.5
8.0
4.0
75
15
15
45
15
15
1
C
= - 55 °C
1.6
Unit
nA
µA
nC
nC
ns
Ω
Ω
V
A
S
V
2.0

Related parts for SI2302CDS-T1-GE3