DMG4468LK3-13 Diodes Inc, DMG4468LK3-13 Datasheet

MOSFET N-CH 30V 9.7A TO252

DMG4468LK3-13

Manufacturer Part Number
DMG4468LK3-13
Description
MOSFET N-CH 30V 9.7A TO252
Manufacturer
Diodes Inc
Datasheet
1.DMG4468LK3-13.pdf (6 pages)

Specifications of DMG4468LK3-13

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
16 mOhm @ 11.6A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
9.7A
Vgs(th) (max) @ Id
1.95V @ 250µA
Gate Charge (qg) @ Vgs
18.85nC @ 10V
Input Capacitance (ciss) @ Vds
867pF @ 15V
Power - Max
1.68W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
11 mOhms
Gate Charge Qg
18.85 nC
Forward Transconductance Gfs (max / Min)
8 S
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
9.7 A
Power Dissipation
1.68 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DMG4468LK3-13DITR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
DMG4468LK3-13
Manufacturer:
DIODES
Quantity:
12 500
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
DMG4468LK3-13
Manufacturer:
DIODES/美台
Quantity:
20 000
Company:
H&T Electronics H&T Electronics
Part Number:
DMG4468LK3-13
Quantity:
73 000
Maximum Ratings
Thermal Characteristics
Features
•
•
•
•
•
•
•
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Pulsed Drain Current (Note 4)
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @T
Operating and Storage Temperature Range
Notes:
DMG4468LK3
Document number: DS31958 Rev. 2 - 2
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.
TOP VIEW
@T
A
= 25°C unless otherwise specified
Characteristic
Characteristic
A
= 25°C
Steady
State
PIN OUT -TOP VIEW
www.diodes.com
G
D
D
1 of 6
T
T
A
A
S
Mechanical Data
•
•
•
•
•
•
•
•
= 25°C
= 85°C
Please click here to visit our online spice models database.
Case: TO252-3L
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 5
Ordering Information: See Page 5
Weight: 0.33 grams (approximate)
N-CHANNEL ENHANCEMENT MODE MOSFET
T
Symbol
Symbol
J
V
R
V
, T
P
I
DSS
GSS
DM
θJA
I
G
D
D
STG
Equivalent Circuit
-55 to +150
D
S
Value
Value
1.68
74.3
±20
9.7
6.3
30
48
DMG4468LK3
© Diodes Incorporated
October 2009
°C/W
Unit
Unit
°C
W
V
V
A
A

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DMG4468LK3-13 Summary of contents

Page 1

... Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 5 • Ordering Information: See Page 5 • Weight: 0.33 grams (approximate PIN OUT -TOP VIEW Steady T = 25°C A State T = 85° 25° www.diodes.com DMG4468LK3 Equivalent Circuit Symbol Value Unit DSS ± GSS 9 6 ...

Page 2

... (ON 0. 867 iss - C 85 oss - C 81 rss - R 1. 18 5.46 D(on 14. 18.84 D(off www.diodes.com DMG4468LK3 Max Unit Test Condition - 0V 250μ μA 1 30V ±100 ±20V 1. 250μ 10V 11. mΩ 4.5V 10A 10V 1 0V 15V 0V 1.0MHz - pF Ω 0V 0V 1MHz ...

Page 3

... Fig. 6 Typical Static Drain-Source On-State Resistance 10,000 1,000 100 10 1 100 125 150 0 Fig. 8 Typical Drain-Source Leakage Current vs Voltage www.diodes.com DMG4468LK3 150° 125° 85° 25° -55° DRAIN CURRENT (A) D Fig. 4 Typical Drain-Source On-Resistance vs ...

Page 4

... Fig. 10 Gate-Source Leakage Current vs. Voltage 100 25° 0.0001 0.001 0. Fig. 12 Single Pulse Maximum Power Dissipation D = 0.9 0.001 0.01 0 PULSE DURATION TIME (s) 1 Fig. 13 Transient Thermal Response www.diodes.com DMG4468LK3 T = 125° 150° -55° 25° GATE SOURCE VOLTAGE(V) GS Single Pulse R = 77°C/W θ ( r(t) θ ...

Page 5

... Ordering Information (Note 7) Part Number DMG4468LK3-13 Notes: 7. For packaging details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Package Outline Dimensions Suggested Pad Layout Y2 Y1 DMG4468LK3 Document number: DS31958 Rev Case TO252-3L = Manufacturer’s Marking N4468L = Product Type Marking Code N4468L YYWW = Date Code Marking ...

Page 6

... Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2009, Diodes Incorporated www.diodes.com DMG4468LK3 Document number: DS31958 Rev IMPORTANT NOTICE LIFE SUPPORT www.diodes.com DMG4468LK3 October 2009 © Diodes Incorporated ...

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