FDFMA2N028Z Fairchild Semiconductor, FDFMA2N028Z Datasheet

MOSFET N-CH 20V 3.7A MLP2X2

FDFMA2N028Z

Manufacturer Part Number
FDFMA2N028Z
Description
MOSFET N-CH 20V 3.7A MLP2X2
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDFMA2N028Z

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
68 mOhm @ 3.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.7A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
6nC @ 4.5V
Input Capacitance (ciss) @ Vds
455pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-MLP, 6-MicroFET™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDFMA2N028ZTR
©2008 Fairchild Semiconductor Corporation
FDFMA2N028Z Rev.B1
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDFMA2N028Z
Integrated N-Channel PowerTrench
20V, 3.7A, 68mΩ
Features
MOSFET
Schottky
V
V
I
P
T
V
I
R
R
R
R
D
O
J
DS
GS
D
RR
θJA
θJA
θJA
θJA
, T
Max r
Max r
V
Low profile - 0.8 mm maximum - in the new package MicroFET
2x2 mm
RoHS Compliant
HBM ESD protection level > 2kV (Note 3)
F
Symbol
Device Marking
STG
< 0.37V @ 500mA
DS(on)
DS(on)
.N28
= 68mΩ at V
= 86mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
MicroFET 2X2
GS
GS
= 4.5V, I
= 2.5V, I
FDFMA2N028Z
-Pulsed
Device
D
D
= 3.7A
= 3.3A
T
Pin 1
C
J
= 25°C unless otherwise noted
A
Parameter
G
MicroFET 2X2
NC
Package
S
D
1
®
General Description
This device is designed specifically as a single package solution
for a boost topology in cellular handset and other ultra-portable
applications. It features a MOSFET with low on-state resistance,
and an independently connected schottky diode with low forward
voltage.
The MicroFET 2x2 package offers exceptional thermal
performance for its physical size and is well suited to switching
and linear mode applications.
Application
MOSFET and Schottky Diode
DC - DC Conversion
Reel Size
NC
A
D
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
1
2
3
Tape Width
8mm
-55 to +150
Ratings
±12
173
140
3.7
1.4
0.7
86
86
20
20
6
2
March 2008
www.fairchildsemi.com
6
5
4
Quantity
3000 units
S
G
C
Units
°C/W
°C
W
V
V
A
V
A

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FDFMA2N028Z Summary of contents

Page 1

... Package Marking and Ordering Information Device Marking Device .N28 FDFMA2N028Z ©2008 Fairchild Semiconductor Corporation FDFMA2N028Z Rev.B1 ® MOSFET and Schottky Diode General Description This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable = 3.7A D applications ...

Page 2

... V Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr Schottky Diode Characteristics V Reverse Voltage R I Reverse Leakage R V Forward Voltage F FDFMA2N028Z Rev. 25°C unless otherwise noted J Test Conditions I = 250μ 250μA, referenced to 25° 16V ±12V, V ...

Page 3

... Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only protection against ESD. No gate overvoltage rating is implied. FDFMA2N028Z Rev. 25°C unless otherwise noted J 2 pad 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material pad copper, 1.5” ...

Page 4

... Figure 3. Normalized On- Resistance vs Junction Temperature 6 PULSE DURATION = 300 μ s DUTY CYCLE = 2%MAX 125 0.5 1.0 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDFMA2N028Z Rev. 25°C unless otherwise noted J = 4.5V μ PULSE DURATION = 300 s DUTY CYCLE = 2%MAX V = 1.5V GS 0.8 1.0 1.2 75 100 125 150 =5V ...

Page 5

... V , DRAIN to SOURCE VOLTAGE (V) DS Figure 9. Forward Bias Safe Operating Area 125 0.1 0. 0.001 0 200 400 V FORWARD VOLTAGE(mV) F, Figure 11. Schottky Diode Forward Current FDFMA2N028Z Rev. 25°C unless otherwise noted 15V 10V 100us 1ms 10ms 100ms 1s 10s 0.001 600 800 Figure 12. 5 1000 ...

Page 6

... Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 SINGLE PULSE 0.01 0.005 - FDFMA2N028Z Rev. 25°C unless otherwise noted RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve NOTES: DUTY FACTOR PEAK θJA θ www.fairchildsemi.com 3 10 ...

Page 7

... Dimensional Outline and Pad Layout rev3 FDFMA2N028Z Rev.B1 7 www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDFMA2N028Z Rev.B1 FPS™ PDP-SPM™ F-PFS™ Power-SPM™ ® FRFET PowerTrench Global Power Resource SM Programmable Active Droop™ ...

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