2N7000 Fairchild Semiconductor, 2N7000 Datasheet

MOSFET N-CH 60V 200MA TO-92

2N7000

Manufacturer Part Number
2N7000
Description
MOSFET N-CH 60V 200MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of 2N7000

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
200mA
Vgs(th) (max) @ Id
3V @ 1mA
Input Capacitance (ciss) @ Vds
50pF @ 25V
Power - Max
400mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
0.1 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.2 A
Power Dissipation
400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2N7000FS

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Absolute Maximum Ratings
Symbol
V
V
V
I
P
T
T
THERMAL CHARACTERISTICS
R
© 1997 Fairchild Semiconductor Corporation
General Description
___________________________________________________________________________________________
D
These N-Channel enhancement mode field effect transistors
are produced using Fairchild's proprietary, high cell density,
DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable,
and fast switching performance. They can be used in most
applications requiring up to 400mA DC and can deliver
pulsed currents up to 2A. These products are particularly
suited for low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and other
switching applications.
2N7000 / 2N7002 / NDS7002A
N-Channel Enhancement Mode Field Effect Transistor
DSS
GSS
D
J
L
DGR
,T
JA
STG
D
G
S
Parameter
Drain-Source Voltage
Drain-Gate Voltage (R
Gate-Source Voltage - Continuous
Maximum Drain Current - Continuous
Maximum Power Dissipation
Derated above 25
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
Thermal Resistance, Junction-to-Ambient
TO-92
2N7000
- Non Repetitive (tp < 50µs)
o
C
GS
- Pulsed
< 1 M )
T
A
= 25°C unless otherwise noted
2N7002/NDS7002A
(TO-236AB)
2N7000
312.5
200
500
400
Features
3.2
High density cell design for low R
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
-55 to 150
2N7002
115
800
200
300
625
1.6
60
60
20
40
G
D
-65 to 150
S
NDS7002A
DS(ON)
1500
280
300
417
2.4
November 1995
.
2N7000.SAM Rev. A1
mW/°C
Units
°C/W
mW
mA
°C
°C
V
V
V

Related parts for 2N7000

2N7000 Summary of contents

Page 1

... NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents ...

Page 2

... A 1.2 NDS7002 =125°C 2 1.7 =125°C 2.8 2N7000 0.6 0.14 2N7002 0.6 0.09 NDS7002A 0.6 0.09 Max Units V 1 µ µA 0 100 nA -10 nA -100 2 5.3 7.5 13.5 7.5 13 2.5 V 0.4 3.75 1.5 1 0.15 2N7000.SAM Rev. A1 ...

Page 3

... NDS7002A 500 2700 2N7000 100 320 mS 2N7002 80 320 NDS7002A 80 320 All 20 50 All 11 25 All 4 5 2N7000 2N700 20 NDS7002A 2N7000 2N700 20 A NDS7002 2N7002 115 mA NDS7002A 280 2N7002 0.8 NDS7002A 1.5 2N7002 0.88 1.5 A 0.88 1.2 NDS7002 2N7000.SAM Rev ...

Page 4

... T , JUNCTION T EMPERATURE (°C) J Figure 3. On-Resistance Variation with Temperature -55° 10V DS 1.6 1.2 0.8 0 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics 2N7000 / 2N7002 / NDS7002A 8.0 7 6 4 Figure 2. On-Resistance Variation with Gate Figure 4. On-Resistance Variation with Drain 1 .1 25° ...

Page 5

... Figure 7. Breakdown Voltage Variation with Temperature MHz DRAIN TO SOURCE VOLTAGE (V) DS Figure 9. Capacitance Characteristics GEN G S Figure 11. (continued) 2N7000 / 2N7002 /NDS7002A 100 125 150 Figure 8. Body Diode Forward Voltage Variation with iss 8 C oss rss Figure 10. Gate Charge Characteristics t d(on OUT ...

Page 6

... Figure 15. NDS7000A Maximum Safe Operating Area 0.5 0 0.2 0.1 0.1 0.05 0.05 0 .02 0.01 0.02 Single Pulse 0.01 0.0001 0.001 Figure 16. TO-92, 2N7000 Transient Thermal Response Curve 0.2 0 0.01 Single Pulse 0.002 0.001 0.0001 0.001 Figure 17. SOT-23, 2N7002 / NDS7002A Transient Thermal Response Curve ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...

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