SIA814DJ-T1-GE3 Vishay, SIA814DJ-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SIA814DJ-T1-GE3
• Description: MOSFET N-CH 30V 4.5A SC70-6
• Manufacturer: Vishay

Specifications of SIA814DJ-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 61 mOhm @ 3.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 340pF @ 10V
• Power - Max: 6.5W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-70-6 Dual
• Transistor Polarity: N Channel + Schottky Diode
• Continuous Drain Current Id: 4.5A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 110mohm
• Rds(on) Test Voltage Vgs: 12V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SIA814DJ-T1-GE3TR

MOSFET TYPICAL CHARACTERISTICS T
Document Number: 68672
S-81176-Rev. A, 26-May-08
100
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
10
0.0
1
- 50
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
0.4
T
J
J
= 150 °C
- Temperature (°C)
25
0.6
50
75
0.8
0.01
100
0.1
T
10
100
1
J
0.1
I
= 25 °C
D
1.0
= 250 µA
* V
Safe Operating Area, Junction-to-Ambient
Single Pulse
125
T
GS
A
= 25 °C
Limited by R
> minimum V
New Product
1.2
A
V
150
DS
= 25 °C, unless otherwise noted
- Drain-to-Source Voltage (V)
1
DS(on)
GS
at which R
*
BVDSS
Limited
10
0.20
0.15
0.10
0.05
0.00
DS(on)
15
20
10
0.001
5
0
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
DC
100 µs
1 ms
10 ms
100 ms
1 s, 10 s
0.01
2
V
100
GS
- Gate-to-Source Voltage (V)
0.1
4
Pulse (s)
1
Vishay Siliconix
6
SiA814DJ
10
I
D
T
T
www.vishay.com
= 3.3 A
J
J
= 125 °C
= 25 °C
8
100
1000
10
5