SIA814DJ-T1-GE3 Vishay, SIA814DJ-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SIA814DJ-T1-GE3
• Description: MOSFET N-CH 30V 4.5A SC70-6
• Manufacturer: Vishay

Specifications of SIA814DJ-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 61 mOhm @ 3.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 340pF @ 10V
• Power - Max: 6.5W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-70-6 Dual
• Transistor Polarity: N Channel + Schottky Diode
• Continuous Drain Current Id: 4.5A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 110mohm
• Rds(on) Test Voltage Vgs: 12V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SIA814DJ-T1-GE3TR

SiA814DJ
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS T
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
6
10
8
6
4
2
0
0
Package Limited
25
D
T
is based on T
C
Current Derating*
50
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
New Product
A
150
= 25 °C, unless otherwise noted
8
6
4
2
0
25
50
T
C
- Case Temperature (°C)
Power Derating
75
S-81176-Rev. A, 26-May-08
Document Number: 68672
100
125
150